Datasheet > CSB1272

CSB1272

更新时间： 2024-09-20 23:43:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
2页	43K
描述
TRANSISTOR \| BJT \| DARLINGTON \| PNP \| 100V V(BR)CEO \| 2A I(C) \| TO-126

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中文翻译

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数据手册

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CSB1272 数据手册

IS/ISO 9002

Lic# QSC/L- 000019.2

IS / IECQC 700000

IS / IECQC 750100

Continental Device India Limited

An IS/ISO 9002 and IECQ Certified Manufacturer

PNP SILICON PLASTIC POWER DARLINGTON TRANSISTOR

CSB1272

(9AW)

TO126

MARKING : CDIL

B1272

Low Freq. Power Amp.

ABSOLUTE MAXIMUM RATINGS(Ta=25deg C)

DESCRIPTION

SYMBOL

VCBO

VCEO

VEBO

VALUE

100

8.0

2.0

UNIT

Collector -Base Voltage

Collector -Emitter Voltage

Emitter Base Voltage

Collector Current Continuous

Peak*

3.0

Collector Power Dissipation @ Ta=25 deg C

Collector Power Dissipation @ Tc=25 deg C

Junction Temperature

1.2

150

-55 to +150

deg C

Tstg

Storage Temperature Range

*Single Pulse Pw=100ms

ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Specified)

DESCRIPTION

SYMBOL TEST CONDITION

MIN

100

TYP

MAX

3.0

1.5

UNIT

Collector Emitter Voltage

Collector Base Voltage

Collector Cut off Current

Emitter Cut off Current

Collector Emitter Saturation Voltage

DC Current Gain

VCEO

VCBO

ICBO

IEBO

IC=5mA, IB=0

IC=50uA, IE=0

VCB=100V, IE=0

VBE=7V,IC=0

VCE(Sat)** IC=1A,IB=1mA

hFE**

IC=1A, VCE=2V

1.0

Dynamic Characteristics

Collector Output Capacitance

**Pulse Test

Cob

VCB=10V, IE=0

f=1MHz

Continental Device India Limited

Page 1 of 2

Data Sheet

中文翻译

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