Datasheet > CSB20S45CT-A

CSB20S45CT-A

更新时间： 2024-11-09 01:25:51

品牌	Logo	应用领域
竹懋 - CITC		/
页数	文件大小	规格书
3页	465K
描述
Super Low Barrier High Voltage Power Rectifier

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中文翻译

获取价格

数据手册

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CSB20S45CT-A 数据手册

CSB20S45CT-A

Super Low Barrier High Voltage Power Rectifier

Chip Integration Technology Corporation

Main Product Characteristics

■ Outline

I_F(AV)

V_RRM

T_J

2x10A

D²PAK(TO-263)

45V

150^OC

0.36V

V_(Typ)

0.411(10.45)

0.380(9.65)

■ Features

0.055(1.40)

0.031(0.80)

0.190(4.83)

0.160(4.06)

0.055(1.40)

0.045(1.14)

0.245(6.22)

MIN

• Low forward voltage drop.

• Excellent high temperature stability.

• Fast switching capability.

• Suffix "G" indicates Halogen-free part, ex.CSΒ20S45CTG-A.

• Lead-free parts meet environmental standards of

MIL-STD-19500 /228

0.370(9.40)

0.320(8.13)

Marking code

0~0.012(0~0.30)

0.110(2.79)

0.090(2.29)

0.228(5.80)

0.173(4.40)

■ Mechanical data

0.063(1.60)

0.024(0.60)

• Epoxy : UL94-V0 rated flame retardant.

• Case : JEDEC TO-220AB molded plastic body over

passivated chip.

• Lead : Axial leads, solderable per MIL-STD-202,

Method 208 guranteed.

0.024(0.60)

0.011(0.28)

0.205(5.20)

0.189(4.80)

PIN 1

PIN 3

PIN 2

• Polarity: Color band denotes cathode end.

• Mounting Position : Any.

• Weight : Approximated 2.25 gram.

■ Maximum ratings and electrical characteristics

Rating at 25^OC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Parameter

Marking code

Conditions

Symbol

CSB20S45CT-A

CSB20S45CT

UNIT

Peak repetitive reverse voltage

Working peak reverse voltage

DC blocking voltage

V_RRM

V_RWM

V_RM

I_O

Forward rectified current (total device)

8.3ms single half sine-wave superimposed on

rate load (JEDEC method)

Forward surge current (per diode)

I_FSM

200

Peak repetitive reverse surge current

(per diode)

I_RRM

2us - 1kHz

^OC/W

^OC

R_θJC

Thermal resistance(1)

Junction to case

Operating and Storage temperature

T_J, T_STG

-55 ~ +150

Parameter

Conditions

I_F= 10A, T_J= 25^OC

I_F= 10A, T_J= 125^OC

I_F= 20A, T_J= 25^OC

V_R= V_RRMT_J= 25^OC

V_R= V_RRMT_J= 125^OC

Symbol

V_F

MIN.

TYP.

360

MAX.

UNIT

470

440

600

0.5

Forward voltage drop (per diode)

I_R

Reverse current (per diode)

100

Note : 1.Thermal resistance from junction to case per leg, with heatsink size(1.35" x 0.95" x 0.18") Al-plate.

Document ID : DS-11KDZ

Revised Date : 2015/08/11

Revision : C1

12 3

中文翻译

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