Datasheet > CSB1626

CSB1626

更新时间： 2024-09-20 23:43:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
3页	78K
描述
TRANSISTOR \| BJT \| DARLINGTON \| PNP \| 110V V(BR)CEO \| 6A I(C) \| TO-220AB

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中文翻译

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数据手册

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CSB1626 数据手册

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ꢈꢉꢊꢋꢄꢌꢁꢍꢂꢈꢎꢄꢆꢆꢆꢆꢏꢅꢐꢇ

Continental Device India Limited

An IS/ISO 9002 and IECQ Certified Manufacturer

PNP SILICON EPITAXIAL POWER DARLINGTON TRANSISTOR

CSB1626

TO-220

Plastic Package

Complementary CSD2495

ABSOLUTE MAXIMUM RATINGS (Ta=25ºC)

DESCRIPTION

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

VALUE

110

UNIT

Collector -Base Voltage(open emitter)

Collector -Emitter Voltage(open base)

Emitter Base Voltage(open collector)

Collector Current

5.0

6.0

I_B

Base Current

1.0

P_tot

T_j

T_stg

Total Power Dissipation upto Tc=25ºC

Junction Temperature

Storage Temperature

150

-65 to +150

ºC

ELECTRICAL CHARACTERISTICS (Tc=25ºC Unless Otherwise Specified)

DESCRIPTION

SYMBOL TEST CONDITION

MIN

TYP

MAX

UNIT

I_CBO

I_EBO

V_CEO

V_CE(sat)

V_BE(sat)

h_FE

V_CB=110V, I_E=0

V_EB=5V, I_C=0

I_C=30mA, I_B=0

I_C=5A, I_B=5mA

I_C=5A,V_CE=4V

Collector Cut off Current

Emitter Cut off Current

Breakdown Voltages

100

µA

110

Collector Emitter Saturation Voltage

2.5

DC Current Gain

h_FE

O/P

f_T

I_C=0.5A,V_CE=12V

Transistors frequency

Output Capacitance

MHz

C_ob

V_CB=10V,I_E=0,f=1MHz

Continental Device India Limited

Data Sheet

Page 1 of 3

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中文翻译

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