Datasheet > CSB1436P

CSB1436P

更新时间： 2024-11-09 23:43:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
2页	43K
描述
TRANSISTOR \| BJT \| PNP \| 20V V(BR)CEO \| 5A I(C) \| TO-126

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中文翻译

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数据手册

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CSB1436P 数据手册

IS/ISO 9002

Lic# QSC/L- 000019.2

IS / IECQC 700000

IS / IECQC 750100

Continental Device India Limited

An IS/ISO 9002 and IECQ Certified Manufacturer

PNP SILICON PLASTIC POWER TRANSISTOR

CSB1436

(9AW)

TO126

MARKING : CDIL

B1436

Low Freq.Power AMP.

ABSOLUTE MAXIMUM RATINGS(Ta=25deg C)

DESCRIPTION

SYMBOL

VCBO

VCEO

VEBO

VALUE

UNIT

Collector -Base Voltage

Collector -Emitter Voltage

Emitter Base Voltage

Collector Current (DC)

Pulse*

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

Tstg

1.5

150

-55 to +150

deg C

*Single Pulse Pw=10ms

ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)

DESCRIPTION

SYMBOL TEST CONDITION

MIN

TYP

MAX

UNIT

Collector Emitter Voltage

Collector Base Voltage

Emitter Base Voltage

Collector Cut off Current

VCEO

VCBO

VEBO

ICBO

ICEO

IEBO

IC=1mA, IB=0

IC=50uA, IE=0

IE=50uA,IC=0

VCB=20V, IE=0

VCE=20V,IB=0

VBE=5V,IC=0

500

Emitter Cut off Current

Collector Emitter Saturation Voltage

DC Current Gain

VCE(Sat)** IC=4A,IB=0,1A

hFE

IC=0.5A, VCE=2V

390

Dynamic Characteristics

Transition Frequency

VCE=6V,IC=50mA,

f=100MHz

120

MHz

Collector Output Capacitance

Cob

VCB=20V, IE=0

f=1MHz

hFE CLASSIFICATION

P : 82-180;

Q : 120-270;

R: 180-390

**Pulse Test

Continental Device India Limited

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Data Sheet

中文翻译

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