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CSB1436R PDF预览

CSB1436R

更新时间: 2024-11-09 23:43:59
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
2页 43K
描述
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 5A I(C) | TO-126

CSB1436R 数据手册

 浏览型号CSB1436R的Datasheet PDF文件第2页 
IS/ISO 9002  
Lic# QSC/L- 000019.2  
IS / IECQC 700000  
IS / IECQC 750100  
Continental Device India Limited  
An IS/ISO 9002 and IECQ Certified Manufacturer  
PNP SILICON PLASTIC POWER TRANSISTOR  
CSB1436  
(9AW)  
TO126  
MARKING : CDIL  
B1436  
R
Low Freq.Power AMP.  
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C)  
DESCRIPTION  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
VALUE  
UNIT  
V
V
V
A
Collector -Base Voltage  
Collector -Emitter Voltage  
Emitter Base Voltage  
Collector Current (DC)  
Pulse*  
30  
20  
6
5
10  
A
Collector Power Dissipation  
Junction Temperature  
Storage Temperature Range  
PC  
Tj  
Tstg  
1.5  
150  
-55 to +150  
W
deg C  
deg C  
*Single Pulse Pw=10ms  
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)  
DESCRIPTION  
SYMBOL TEST CONDITION  
MIN  
20  
30  
6
-
-
-
-
82  
TYP  
MAX  
-
-
UNIT  
V
V
Collector Emitter Voltage  
Collector Base Voltage  
Emitter Base Voltage  
Collector Cut off Current  
VCEO  
VCBO  
VEBO  
ICBO  
ICEO  
IEBO  
IC=1mA, IB=0  
IC=50uA, IE=0  
IE=50uA,IC=0  
VCB=20V, IE=0  
VCE=20V,IB=0  
VBE=5V,IC=0  
-
-
-
-
-
-
-
-
-
V
500  
1
500  
1
nA  
uA  
nA  
V
Emitter Cut off Current  
Collector Emitter Saturation Voltage  
DC Current Gain  
VCE(Sat)** IC=4A,IB=0,1A  
hFE  
IC=0.5A, VCE=2V  
390  
Dynamic Characteristics  
Transition Frequency  
ft  
VCE=6V,IC=50mA,  
f=100MHz  
-
-
120  
60  
-
-
MHz  
pF  
Collector Output Capacitance  
Cob  
VCB=20V, IE=0  
f=1MHz  
hFE CLASSIFICATION  
P : 82-180;  
Q : 120-270;  
R: 180-390  
**Pulse Test  
Continental Device India Limited  
Page 1 of 2  
Data Sheet  

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