是否Rohs认证: | 符合 | 生命周期: | Contact Manufacturer |
零件包装代码: | TO-92 | 包装说明: | CYLINDRICAL, O-PBCY-T3 |
针数: | 3 | Reach Compliance Code: | compliant |
风险等级: | 5.75 | Is Samacsys: | N |
最大集电极电流 (IC): | 3 A | 配置: | SINGLE |
最小直流电流增益 (hFE): | 120 | JEDEC-95代码: | TO-92 |
JESD-30 代码: | O-PBCY-T3 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | ROUND | 封装形式: | CYLINDRICAL |
极性/信道类型: | PNP | 最大功率耗散 (Abs): | 0.75 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | BOTTOM | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 240 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
CSB1426R | CDIL |
获取价格 |
Small Signal Bipolar Transistor, 3A I(C), 1-Element, PNP, Silicon, TO-92, PLASTIC, TO-92, | |
CSB1436P | ETC |
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TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 5A I(C) | TO-126 | |
CSB1436Q | ETC |
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TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 5A I(C) | TO-126 | |
CSB1436R | ETC |
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TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 5A I(C) | TO-126 | |
CSB1626 | ETC |
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TRANSISTOR | BJT | DARLINGTON | PNP | 110V V(BR)CEO | 6A I(C) | TO-220AB | |
CSB1626O | CDIL |
获取价格 |
Power Bipolar Transistor, 6A I(C), 110V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast | |
CSB1626O/P | ETC |
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TRANSISTOR | BJT | DARLINGTON | PNP | 110V V(BR)CEO | 6A I(C) | TO-220AB | |
CSB1626P | CDIL |
获取价格 |
Power Bipolar Transistor, 6A I(C), 110V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast | |
CSB16C04 | CET |
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16 AMPS. SCHOTTKY BARRIER RECTIFIERS | |
CSB20C04 | CET |
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20 AMPS. SCHOTTKY BARRIER RECTIFIERS |