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CMPT5086TRPBFREE PDF预览

CMPT5086TRPBFREE

更新时间: 2024-11-11 09:59:27
品牌 Logo 应用领域
CENTRAL /
页数 文件大小 规格书
2页 324K
描述
Transistor,

CMPT5086TRPBFREE 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:compliant
风险等级:5.61最大集电极电流 (IC):0.05 A
配置:Single最小直流电流增益 (hFE):150
最高工作温度:150 °C极性/信道类型:PNP
最大功率耗散 (Abs):0.35 W子类别:Other Transistors
表面贴装:YES标称过渡频率 (fT):40 MHz
Base Number Matches:1

CMPT5086TRPBFREE 数据手册

 浏览型号CMPT5086TRPBFREE的Datasheet PDF文件第2页 
CMPT5086  
CMPT5087  
www.centralsemi.com  
SURFACE MOUNT  
PNP SILICON TRANSISTOR  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR CMPT5086 and  
CMPT5087 are PNP silicon transistors manufactured  
by the epitaxial planar process, epoxy molded in a  
surface mount package, designed for applications  
requiring high gain and low noise.  
MARKING CODES: CMPT5086: C2P  
CMPT5087: C2Q  
SOT-23 CASE  
MAXIMUM RATINGS: (T =25°C)  
SYMBOL  
UNITS  
V
A
Collector-Base Voltage  
V
V
V
50  
50  
CBO  
CEO  
EBO  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
3.0  
V
Continuous Collector Current  
Power Dissipation  
I
50  
mA  
mW  
°C  
C
P
350  
D
Operating and Storage Junction Temperature  
Thermal Resistance  
T , T  
-65 to +150  
357  
J
stg  
Θ
°C/W  
JA  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
CMPT5086  
MIN MAX  
CMPT5087  
SYMBOL  
TEST CONDITIONS  
MIN  
-
MAX  
UNITS  
I
I
V
V
=10V  
=35V  
-
-
10  
10  
nA  
nA  
V
CBO  
CBO  
CB  
CB  
50  
-
50  
BV  
BV  
BV  
I =100μA  
50  
50  
3.0  
-
-
50  
50  
3.0  
-
-
CBO  
CEO  
EBO  
C
I =1.0mA  
-
-
-
-
V
C
I =100μA  
V
E
V
V
I =10mA, I =1.0mA  
0.30  
0.85  
500  
-
0.30  
0.85  
800  
-
V
CE(SAT)  
BE(SAT)  
FE  
C
B
I =10mA, I =1.0mA  
-
-
V
C
B
C
h
h
h
V
=5.0V, I =0.1mA  
150  
150  
150  
40  
-
250  
250  
250  
40  
-
CE  
CE  
CE  
CE  
CB  
CE  
CE  
V
V
V
V
V
V
=5.0V, I =1.0mA  
C
=5.0V, I =10mA  
FE  
-
-
FE  
C
f
=5.0V, I =500μA, f=20MHz  
-
-
MHz  
pF  
T
C
C
=5.0V, I =0, f=1.0MHz  
4.0  
600  
4.0  
900  
ob  
fe  
E
h
=5.0V, I =1.0mA, f=1.0kHz  
150  
250  
C
NF  
=5.0V, I =20mA, R =10kΩ,  
C S  
f=10Hz to 15.7kHz  
-
-
3.0  
3.0  
-
-
2.0  
2.0  
dB  
dB  
NF  
V
=5.0V, I =100μA, R =3.0kΩ, f=1.0kHz  
CE  
C
S
R5 (1-February 2010)  

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