Datasheet > CMPT5087E_10

CMPT5087E_10

更新时间： 2024-09-21 09:27:43

品牌	Logo	应用领域
CENTRAL		晶体晶体管
页数	文件大小	规格书
2页	330K
描述
ENHANCED SPECIFICATION SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS

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CMPT5087E_10 数据手册

CMPT5087E PNP

CMPT5088E NPN

www.centralsemi.com

ENHANCED SPECIFICATION

SURFACE MOUNT

DESCRIPTION:

COMPLEMENTARY

SILICON TRANSISTORS

The CENTRAL SEMICONDUCTOR CMPT5087E

and CMPT5088E, are Silicon transistors in an epoxy

molded surface mount package with enhanced

specifications designed for applications requiring high

gain and low noise.

MARKING CODES: CMPT5087E: C2QE

CMPT5088E: C1QE

SOT-23 CASE

MAXIMUM RATINGS: (T =25°C)

Collector-Base Voltage

SYMBOL

UNITS

5.0

100

350

♦

CBO

CEO

EBO

♦^{Collector-Emitter Voltage}

♦

Emitter-Base Voltage

Continuous Collector Current

Power Dissipation

°C

Operating and Storage Junction Temperature

Thermal Resistance

T , T

stg

-65 to +150

357

°C/W

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

TYP

SYMBOL

TEST CONDITIONS

MIN

NPN PNP

MAX

UNITS

=20V

CBO

EBO

=3.0V

I =100µA

135 150

CBO

CEO

♦

I =1.0mA

8.7

105

7.5

I =100µA

5.0

EBO

I =10mA, I =1.0mA

100

400

800

900

CE(SAT)

I =100mA, I =10mA

110 225

700 700

430 390

435 380

430 350

♦♦ ^V_V^CE(SAT)

I =10mA, I =1.0mA

BE(SAT)

=5.0V, I =0.1mA

300

♦

=5.0V, I =1.0mA

=5.0V, I =10mA

=5.0V, I =100mA

125

♦♦ _f^hFE

=5.0V, I =500µA, f=20MHz

100

MHz

♦

=5.0V, I =0, f=1.0MHz

4.0

=0.5V, I =0, f=1.0MHz

=5.0V, I =1.0mA, f=1.0kHz

350

1400

=5.0V, I =100μA, R =10kΩ f=10Hz to 15.7kHz

3.0

♦ Enhanced specification

♦♦ Additional Enhanced specification

R1 (1-February 2010)

中文翻译

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