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CMPT5087ETR PDF预览

CMPT5087ETR

更新时间: 2024-09-21 19:22:31
品牌 Logo 应用领域
CENTRAL 光电二极管晶体管
页数 文件大小 规格书
2页 130K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3

CMPT5087ETR 技术参数

生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.67其他特性:LOW NOISE
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:50 V
配置:SINGLE最小直流电流增益 (hFE):75
JESD-30 代码:R-PDSO-G3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:PNP最大功率耗散 (Abs):0.35 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:TIN LEAD
端子形式:GULL WING端子位置:DUAL
晶体管元件材料:SILICON标称过渡频率 (fT):100 MHz
Base Number Matches:1

CMPT5087ETR 数据手册

 浏览型号CMPT5087ETR的Datasheet PDF文件第2页 
TM  
CMPT5087E PNP  
CMPT5088E NPN  
Central  
DESCRIPTION:  
Semiconductor Corp.  
ENHANCED SPECIFICATION  
SURFACE MOUNT ULTRAmini™  
COMPLEMENTARY  
The CENTRAL SEMICONDUCTOR  
CMPT5087E, and CMPT5088E, are Silicon  
transistors in an epoxy molded surface mount  
package with enhanced specifications designed  
for applications requiring high gain and low  
noise.  
SILICON TRANSISTORS  
MARKING CODES:  
CMPT5087E PNP MARKING CODE: C2QE  
CMPT5088E NPN MARKING CODE: C1QE  
SOT-23 CASE  
o
MAXIMUM RATINGS: (T =25 C)  
A
SYMBOL  
UNITS  
V
V
V
50  
50  
5.0  
100  
350  
V
V
V
mA  
mW  
CCoolllleeccttoorr--BEmasiteteVroVltoalgtaege  
Emitter-Base Voltage  
Collector Current  
CBO  
CEO  
EBO  
I
C
Power Dissipation  
P
D
Operating and Storage  
Junction Temperature  
Thermal Resistance  
o
T ,T  
stg  
-65 to +150  
357  
C
J
o
Θ
C/W  
JA  
o
ELECTRICAL CHARACTERISTICS: (T =25 C unless otherwise noted)  
A
TYP  
SYMBOL  
TEST CONDITIONS  
MIN  
NPN  
PNP  
MAX  
50  
50  
UNITS  
nA  
nA  
V
V
V
mV  
mV  
mV  
I
I
V
V
=20V  
=3.0V  
CBO  
EBO  
CBO  
CEO  
EBO  
CE(SAT)  
CB  
EB  
BV  
BV  
BV  
I =100µA  
C
50  
50  
5.0  
135  
65  
8.7  
45  
110  
700  
430  
435  
430  
125  
150  
105  
7.5  
50  
225  
700  
390  
380  
350  
75  
I =1.0mA  
C
I =100µA  
E
V  
I =10mA, I =1.0mA  
100  
400  
800  
900  
C
B
♦♦ VCE(SAT)  
I =100mA, I =10mA  
C
B
V
h
h
h
h
f
C
C
I =10mA, I =1.0mA  
BE(SAT)  
FE  
FE  
FE  
FE  
T
ob  
ib  
fe  
C
B
V
=5.0V, I =0.1mA  
C
300  
300  
300  
50  
CE  
CE  
CE  
CE  
CE  
CB  
BE  
CE  
CE  
V
V
V
V
V
V
V
V
=5.0V, I =1.0mA  
C
=5.0V, I =10mA  
C
♦♦  
=5.0V, I =100mA  
C
=5.0V, I =500µA, f=20MHz  
C
100  
MHz  
pF  
pF  
=5.0V, I =0, f=1.0MHz  
4.0  
15  
1400  
3.0  
E
C
C
C
=0.5V, I =0, f=1.0MHz  
=5.0V, I =1.0mA, f=1.0kHz  
h
NF  
350  
=5.0V, I =100µA, R =10kf=10Hz to 15.7kHz  
dB  
S
Enhanced specification.  
♦♦ Additional Enhanced specification.  
R0 (28-October 2004)  

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