CMBT3906ETR

更新时间： 2024-02-27 01:42:12

品牌	Logo	应用领域
CENTRAL		晶体晶体管
页数	文件大小	规格书
2页	205K
描述
Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, 0.80 X 0.60 MM, 0.40 MM HEIGHT, ROHS COMPLIANT, ULTRA SMALL, SOT-923, 3 PIN

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技术参数
数据手册

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CMBT3906ETR 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.61	配置：	Single
最小直流电流增益 (hFE)：	100	最高工作温度：	150 °C
极性/信道类型：	PNP	最大功率耗散 (Abs)：	0.1 W
子类别：	Other Transistors	表面贴装：	YES
标称过渡频率 (fT)：	300 MHz	Base Number Matches：	1

CMBT3906ETR 数据手册

CMBT3904E NPN

CMBT3906E PNP

Central

ENHANCED SPECIFICATION

COMPLEMENTARY FEMTOmini^TM

SILICON TRANSISTORS

Semiconductor Corp.

ELECTRICAL CHARACTERISTICS (continued)

NPN

TYP

PNP

TYP

SYMBOL TEST CONDITIONS

MIN

MAX

UNITS

=1.0V, I =0.1mA

240

235

215

110

130

150

120

♦

=1.0V, I =1.0mA

100

=1.0V, I =10mA

300

=1.0V, I =50mA

♦

=1.0V, I =100mA

=20V, I =10mA, f=100MHz

300

MHz

=5.0V, I =0, f=1.0MHz

4.0

8.0

=0.5V, I =0, f=1.0MHz

=10V, I =1.0mA, f=1.0kHz

1.0

0.1

100

1.0

kΩ

-4

=10V, I =1.0mA, f=1.0kHz

X10

=10V, I =1.0mA, f=1.0kHz

400

=10V, I =1.0mA, f=1.0kHz

µmhos

=5.0V, I =100µA, R =1.0kΩ,

4.0

f=10Hz to 15.7kHz

=3.0V, V =0.5V, I =10mA, I =1.0mA

BE B1

=3.0V, V =0.5V, I =10mA, I =1.0mA

BE B1

=3.0V, I =10mA, I =I =1.0mA

B1 B2

200

=3.0V, I =10mA, I =I =1.0mA

B1 B2

♦ Enhanced specification.

SOT-923 - MECHANICAL OUTLINE

LEAD CODE:

1) BASE

2) EMITTER

3) COLLECTOR

R0 (17-April 2007)

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