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CDSSC4148N-G PDF预览

CDSSC4148N-G

更新时间: 2024-11-16 07:19:31
品牌 Logo 应用领域
上华 - COMCHIP 二极管开关
页数 文件大小 规格书
4页 84K
描述
SMD Switching Diode

CDSSC4148N-G 数据手册

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SMD Switching Diode  
CDSSC4148N-G  
Voltage: 75 V  
Current: 150mA  
RoHS Device  
0805  
Features  
-Designed for mounting on small surface.  
0.087(2.20)  
0.071(1.80)  
-Silicon Epitaxial Planar Diode.  
0.057(1.45)  
0.041(1.05)  
-Fast switching diode.  
-Lead free  
0.037(0.95)  
0.029(0.75)  
Mechanical data  
-Case: 0805  
0.026(0.65)  
0.010(0.25)  
-Marking: Cathode Band.  
-Weight: 0.006 gram(approx.).  
Dimensions in inches and (millimeter)  
1)  
Thermal Characteristics (Parameter at Tamb = 25°C )  
Parameter  
Symbol  
Value  
200  
1.60  
150  
Unit  
mW  
Forward Power Dissipation  
Ptot  
Power derating above 25 °C  
mW/°C  
°C  
Junction Temperature  
TJ  
Thermal Resistance Junction to Ambient Air  
Operating & Storage Temperature Range  
JA  
TSTG  
375  
°C/W  
°C  
-55 to +150  
1)  
Maximum Rating (Parameter at Tamb = 25°C )  
Parameter  
Pepetitive Peak Reverse Voltage  
Symbol  
VRMM  
Value  
100  
Unit  
V
Average rectified current sin half wave rectification with  
resistive load  
IF(AV)  
150  
mA  
Repetitive Peak Forward Current at Tamb=25°C  
IFRM  
IFSM  
300  
mA  
Non-Repetitive Surge Forward Current at t<1s and Tj=25°C  
500  
mA  
mA  
at t8.3ms and Tj=25°C  
1000  
1)  
Electrical Characteristics (Parameter at Tamb = 25°C )  
Parameter  
Symbol  
Value  
Unit  
MAX. Forward Voltage at IF=10mA  
1.0  
1.25  
0.025  
5
V
VF  
V
at IF=100mA  
MAX. Leakage Current at VR=20V  
uA  
uA  
pF  
IR  
at VR=75V  
Capacitance at VR=0V,f=1MHz  
Ctot  
4
4
Reverse Recovery Time at IF=IR=10mA, RL=100Ω  
ns  
Trr  
Notes:  
1.) Valid provided that components are kept at ambient temperature.  
REV:A  
Page 1  
QW-B0049  

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