Datasheet > CDSSC4148N-G

CDSSC4148N-G

更新时间： 2024-09-28 07:19:31

品牌	Logo	应用领域
上华 - COMCHIP		二极管开关
页数	文件大小	规格书
4页	84K
描述
SMD Switching Diode

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中文翻译

获取价格

数据手册

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CDSSC4148N-G 数据手册

SMD Switching Diode

CDSSC4148N-G

Voltage: 75 V

Current: 150mA

RoHS Device

0805

Features

-Designed for mounting on small surface.

0.087(2.20)

0.071(1.80)

-Silicon Epitaxial Planar Diode.

0.057(1.45)

0.041(1.05)

-Fast switching diode.

-Lead free

0.037(0.95)

0.029(0.75)

Mechanical data

-Case: 0805

0.026(0.65)

0.010(0.25)

-Marking: Cathode Band.

-Weight: 0.006 gram(approx.).

Dimensions in inches and (millimeter)

Thermal Characteristics (Parameter at Tamb = 25°C )

Parameter

Symbol

Value

200

1.60

150

Unit

Forward Power Dissipation

Ptot

Power derating above 25 °C

mW/°C

°C

Junction Temperature

Thermal Resistance Junction to Ambient Air

Operating & Storage Temperature Range

RөJA

TSTG

375

°C/W

°C

-55 to +150

Maximum Rating (Parameter at Tamb = 25°C )

Parameter

Pepetitive Peak Reverse Voltage

Symbol

VRMM

Value

100

Unit

Average rectified current sin half wave rectification with

resistive load

IF(AV)

150

Repetitive Peak Forward Current at Tamb=25°C

IFRM

IFSM

300

Non-Repetitive Surge Forward Current at t<1s and Tj=25°C

500

at t≤8.3ms and Tj=25°C

1000

Electrical Characteristics (Parameter at Tamb = 25°C )

Parameter

Symbol

Value

Unit

MAX. Forward Voltage at IF=10mA

1.0

1.25

0.025

at IF=100mA

MAX. Leakage Current at VR=20V

at VR=75V

Capacitance at VR=0V,f=1MHz

Ctot

Reverse Recovery Time at IF=IR=10mA, RL=100Ω

Trr

Notes:

1.) Valid provided that components are kept at ambient temperature.

REV:A

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中文翻译

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