Datasheet > CDST19-G_12

CDST19-G_12

更新时间： 2024-11-16 07:19:31

品牌	Logo	应用领域
上华 - COMCHIP		二极管开关
页数	文件大小	规格书
2页	69K
描述
SMD Switching Diodes

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中文翻译

获取价格

数据手册

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CDST19-G_12 数据手册

SMD Switching Diodes

CDST19-G/20-G

High Speed

RoHS Device

SOT-23

Features

-Fast switching diode.

-Surface mount package ideally for automatic

insertion.

0.119 (3.00)

0.110 (2.80)

-For general purpose switching applications.

-High conductance.

0.056 (1.40)

0.047 (1.20)

Mechanical data

0.083 (2.10)

0.066 (1.70)

0.006 (0.15)

0.002 (0.05)

-Case: SOT-23

0.103 (2.60)

0.086 (2.20)

0.044 (1.10)

0.035 (0.90)

-Terminals: Solder plated, solderable per MIL-

STD-750, Method 2026.

-Weight: 0.008 gram.

0.006 (0.15) max

0.007 (0.20) min

-Marking: CDST19-G JP

0.020 (0.50)

0.013 (0.35)

CDST20-G JR

Circuit Diagram

Dimensions in inches and (millimeters)

Maximum Rating (at Ta=25°C unless otherwise noted)

Symbol

Parameter

CDST19-G

CDST20-G

Unit

Non-Repetitive peak reverse voltage

DC blocking voltage

VRM

100

150

Average rectified output current

Power dissipation

200

250

^OC/W

^OC

Thermal resistance-Junction to ambient air

Junction temperature

RθJA

500

150

^OC

Storage temperature range

TSTG

-65 ~ +150

Electrical Characteristics (at TA=25

C unless otherwise noted)

Max

0.1

Unit

Symbol

Min

Parameter

Test Conditions

100

150

CDST19-G

CDST20-G

Reverse breakdown voltage

VBR

IR=100uA

CDST19-G

CDST20-G

VR=100V

VR=150V

Reverse leakage current

Forward voltage

IF=100mA

IF=200mA

1.25

Junction capacitance

Reverse recovery time

VR=0V, f=1MHZ

trr

IF=IR=30mA, Irr=0.1XIR

REV:A

Page 1

QW-B0021

Comchip Technology CO., LTD.

中文翻译

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