Datasheet > CDST226-G_12

CDST226-G_12

更新时间： 2024-11-16 07:19:27

品牌	Logo	应用领域
上华 - COMCHIP		二极管开关
页数	文件大小	规格书
2页	84K
描述
SMD Switching Diode

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中文翻译

获取价格

数据手册

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CDST226-G_12 数据手册

SMD Switching Diode

CDST226-G

RoHS Device

Features

SOT-23

-Power dissipation: 150mW (@TA=25 ^OC)

0.119 (3.00)

0.110 (2.80)

Mechanical data

-Case: SOT-23

0.056 (1.40)

0.047 (1.20)

-Terminals: Solder plated, solderable per MIL-

STD-750, Method 2026.

0.083 (2.10)

0.066 (1.70)

0.006 (0.15)

0.002 (0.05)

-Marking: C3

0.103 (2.60)

0.086 (2.20)

0.044 (1.10)

0.035 (0.90)

0.006 (0.15) max

0.007 (0.20) min

0.020 (0.50)

0.013 (0.35)

Dimensions in inches and (millimeters)

Maximum Rating (at Ta=25°C unless otherwise noted)

Symbol

Parameter

Limits

Unit

Non-Repetitive peak reverse voltage

VRM

Peak repetitive peak reverse voltage

Working peak reverse voltage

DC blocking voltage

VRRM

VRWM

300

100

Forward continuous current

IFM

Average rectified output current

Peak forward surge current

@10mS

IFSM

150

Power dissipation

^OC

Storage temperature range

TSTG

-55 ~ +125

Electrical Characteristics (at Ta=25°C unless otherwise noted)

Symbol

Parameter

Reverse breakdown voltage

Reverse leakage current

Forward voltage

Test Conditions

Min

Max

Unit

VBR

IR=100μA

μA

0.5

1.2

VR=80V

trr

IF=100mA

VR=0V, f=1MHz

Diode capacitance

Reverse recovery time

REV:B

Page 1

QW-B0024

中文翻译

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