Datasheet > CDST-914-G_12

CDST-914-G_12

更新时间： 2024-09-28 07:19:31

品牌	Logo	应用领域
上华 - COMCHIP		小信号开关二极管
页数	文件大小	规格书
4页	101K
描述
Small Signal Switching Diodes

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中文翻译

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数据手册

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CDST-914-G_12 数据手册

Small Signal Switching Diodes

CDST-914-G

Reverse Voltage: 100 Volts

Forward Current: 300 mA

RoHS Device

SOT-23

Features

-Design for mounting on small surface.

-High speed switching.

0.118(3.00)

0.110(2.80)

-High mounting capability, strong surge

withstand, high reliability.

0.055(1.40)

0.047(1.20)

0.079(2.00)

0.071(1.80)

Mechanical data

-Case: SOT-23, molded plastic.

0.006(0.15)

0.003(0.08)

-Terminals: solderable per MIL-STD-750,

0.041(1.05)

0.035(0.90)

0.100(2.55)

0.089(2.25)

method 2026.

-Approx. weight: 0.0078 grams

0.004(0.10) max

0.020(0.50)

0.012(0.30)

0.020(0.50)

0.012(0.30)

Circuit diagram

Dimensions in inches and (millimeter)

Maximum Ratings and Electrical Characteristics, Single Diode

(at Ta=25°C unless otherwise noted)

Symbol

VRRM

VRMS

VDC

Parameter

Conditions

Min.

Typ.

Max.

100

Units

Peak Repetitive peak reverse voltage

RMS reverse voltage

DC Blocking voltage

100

300

0.5

Average forward current

Peak forward surge current

Power dissipation

IFSM

350

357

°C/W

Thermal resistance junction to ambient

Reverse breakdown voltage

RθJA

V(BR)R

IR=100µA

100

@IF=1mA

0.715

0.855

1.0

@IF=10mA

@IF=50mA

@IF=150mA

Forward voltage

1.25

@VR=75V

@VR=20V

μA

1.0

Reverse current

IF=IR=10mA, Irr=0.1*IR

RL=100Ω

Reverse recovery time

Trr

Capacitance between terminals

Junction temperature

°C

VR=0V, f=1.0MHz

+150

Storage temperature

TSTG

-65

REV:A

Page 1

QW-B0052

Comchip Technology CO., LTD.

12 3 4

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