Datasheet > CDST-99-G_12

CDST-99-G_12

更新时间： 2024-11-16 07:19:31

品牌	Logo	应用领域
上华 - COMCHIP		小信号开关二极管
页数	文件大小	规格书
4页	107K
描述
Small Signal Switching Diodes

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中文翻译

获取价格

数据手册

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CDST-99-G_12 数据手册

Small Signal Switching Diodes

CDST-99-G/70-G/56-G

Reverse Voltage: 70 Volts

Forward Current: 200 mA

RoHS Device

SOT-23

Features

-Design for mounting on small surface.

-High speed switching.

0.119(3.00)

0.110(2.80)

-High mounting capability, strong surge

withstand, high reliability.

0.056(1.40)

0.047(1.20)

Mechanical data

0.079(2.00)

0.071(1.80)

-Case: SOT-23, molded plastic.

-Terminals: solderable per MIL-STD-750,

method 2026.

0.006(0.15)

0.002(0.05)

-Approx. weight: 0.0078 grams

0.041(1.05)

0.035(0.90)

0.100(2.55)

0.089(2.25)

Circuit diagram

0.004(0.10) max

0.008(0.20) min

0.020(0.50)

0.012(0.30)

CDST-99-G

Marking Code: A7

CDST-70-G

Marking Code: A4

CDST-56-G

Marking Code: A1

Dimensions in inches and (millimeter)

Maximum Ratings (at Ta=25°C unless otherwise noted)

Parameter

Symbol

Value

Units

Reverse voltage

Forward current

200

°C/W

°C

Peak surge forward current

Power dissipation

IFSM

500

225

Thermal resistance, junction to ambient

Maximum junction temperature

Storage temperature

RθJA

556

150

TSTG

-55 to +150

°C

Electrical Characteristics(at Ta=25°C unless otherwise noted)

Parameter

Symbol

Conditions

Min.

Max.

Units

Reverse breakdown voltage

VBR

IR=100μA

0.715

0.855

1.0

@IF=1mA

@IF=10mA

@IF=50mA

@IF=150mA

Forward voltage

1.25

μA

2.5

Reverse current

trr

@VR=70V

IF=IR=10mA, Irr=0.1×IR,

RL=100Ω

Reverse recovery time

Diode capacitance

VR=0V, f=1.0MHz

1.5

REV:E

Page 1

QW-B0002

Comchip Technology CO., LTD.

12 3 4

中文翻译

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