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CDSU4448-HF PDF预览

CDSU4448-HF

更新时间: 2024-11-17 01:25:47
品牌 Logo 应用领域
上华 - COMCHIP 光电二极管
页数 文件大小 规格书
4页 128K
描述
SMD Switching Diode

CDSU4448-HF 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-PDSO-N2Reach Compliance Code:compliant
风险等级:5.82配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-PDSO-N2元件数量:1
端子数量:2最高工作温度:125 °C
最低工作温度:-40 °C最大输出电流:0.125 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
最大功率耗散:0.4 W最大重复峰值反向电压:100 V
最大反向恢复时间:0.009 µs表面贴装:YES
端子形式:NO LEAD端子位置:DUAL
处于峰值回流温度下的最长时间:30

CDSU4448-HF 数据手册

 浏览型号CDSU4448-HF的Datasheet PDF文件第2页浏览型号CDSU4448-HF的Datasheet PDF文件第3页浏览型号CDSU4448-HF的Datasheet PDF文件第4页 
SMD Switching Diode  
CDSU4448-HF  
Io = 125 mA  
VR = 80 Volts  
RoHS Device  
Halogen Free  
0603/SOD-523F  
0.071(1.80)  
0.063(1.60)  
Features  
- Fast Switching Speed  
0.039(1.00)  
0.031(0.80)  
- Designed for mounting on small surface.  
- Extremely thin/leadless package.  
Mechanical data  
0.033(0.85)  
0.027(0.70)  
- Case: 0603/SOD-523F standard package,  
molded plastic.  
0.018(0.45)  
0.012(0.30)  
- Terminals: Gold plated, solderable per  
MIL-STD-750,method 2026.  
- Polarity: Indicated by cathode band.  
- Mounting position: Any.  
0.014(0.35)  
0.011(0.28)  
- Weight: 0.003 grams(approx.).  
0.030(0.75)  
0.026(0.65)  
Dimensions in inches and (millimeter)  
Circuit diagram  
Maximum Rating (at TA=25 ºC unless otherwise noted)  
Symbol  
Typ  
Parameter  
Conditions  
Min  
Max Unit  
Repetitive peak reverse voltage  
VRRM  
VR  
100  
80  
V
V
Reverse voltage  
Average forward rectified current  
IO  
125  
mA  
8.3 ms single half sine-wave  
superimposed on rate load  
(JEDEC method)  
Forward current, surge peak  
IFSM  
1
A
Power dissipation  
PD  
RΘJA  
Tj  
400  
250  
mW  
°C/W  
°C  
Thermal resistance  
Junction to ambient  
Operating temperature range  
Storage temperature range  
-40  
-40  
+125  
+125  
TSTG  
°C  
Electrical Characteristics(at TA=25 ºC unless otherwise noted)  
Parameter  
Conditions  
Symbol  
Typ  
Min  
Max Unit  
IF = 5 mA  
IF = 100 mA  
0.72  
V
Forward voltage  
VF  
1
VR = 20V  
VR = 80V  
25  
nA  
Reverse current  
IR  
100  
Capacitance between terminals  
Reverse recovery time  
f = 1MHz, and 0.5 VDC reverse voltage  
CT  
Trr  
9
9
pF  
nS  
IF = IR = 10 mA, Irr = 0.1 X IR, RL =100 ohm  
Company reserves the right to improve product design , functions and reliability without notice.  
REV:A  
Page 1  
QW-A0032  

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