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CDST-914-HF PDF预览

CDST-914-HF

更新时间: 2024-11-16 06:47:19
品牌 Logo 应用领域
上华 - COMCHIP 小信号开关二极管
页数 文件大小 规格书
4页 72K
描述
Small Signal Switching Diodes

CDST-914-HF 技术参数

是否Rohs认证: 符合生命周期:Not Recommended
包装说明:R-PDSO-G3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.75其他特性:HIGH RELIABILITY
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.715 V
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
最大非重复峰值正向电流:2 A元件数量:1
端子数量:3最高工作温度:150 °C
最低工作温度:-40 °C最大输出电流:0.3 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
最大功率耗散:0.35 W最大重复峰值反向电压:100 V
最大反向恢复时间:0.004 µs子类别:Rectifier Diodes
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

CDST-914-HF 数据手册

 浏览型号CDST-914-HF的Datasheet PDF文件第2页浏览型号CDST-914-HF的Datasheet PDF文件第3页浏览型号CDST-914-HF的Datasheet PDF文件第4页 
COMCHIP  
Small Signal Switching Diodes  
SMD Diodes Specialist  
CDST-16-HF/4148-HF/914-HF  
Reverse Voltage: 75 Volts  
Forward Current: 200 mA  
RoHS Device  
SOT-23  
Features  
Halogen free.  
0.119(3.00)  
0.110(2.80)  
Design for mounting on small surface.  
3
High speed switching.  
0.056(1.40)  
0.047(1.20)  
High mounting capability, strong surge  
withstand, high reliability.  
1
2
0.079(2.00)  
0.071(1.80)  
Mechanical data  
Case: SOT-23, molded plastic.  
0.006(0.15)  
0.002(0.05)  
0.041(1.05)  
0.035(0.90)  
Terminals: solderable per MIL-STD-750,  
method 2026.  
0.100(2.55)  
0.089(2.25)  
Approx. weight: 0.0078 grams  
0.004(0.10) max  
0.008(0.20) min  
0.020(0.50)  
0.012(0.30)  
Circuit diagram  
3
Dimensions in inches and (millimeter)  
1
2
Maximum Ratings and Electrical Characteristics  
(at Ta=25°C unless otherwise noted)  
Parameter  
Symbol  
Conditions  
Value  
Units  
Repetitive peak reverse voltage  
Reverse voltage  
VRRM  
VR  
75  
75  
V
V
Forward current  
IF  
200  
2
mA  
A
Peak surge forward current  
Power dissipation  
IFSM  
PD  
T=1.0 μS  
225  
mW  
@IF=1mA  
0.715  
0.855  
1.0  
@IF=10mA  
@IF=50mA  
@IF=150mA  
Maximum forward voltage  
Maximum reverse current  
VF  
IR  
V
1.25  
@VR=20V  
0.025  
2.5  
30  
@VR=75V  
μA  
@VR=25V, TJ=150°C  
@VR=75V, TJ=150°C  
50  
Maximum reverse recovery time  
Typical diode capacitance  
Maximum junction temperature  
Storage temperature  
Trr  
CJ  
4
nS  
pF  
°C  
°C  
IF=10mA, VR=6V  
VR=0V, f=1.0MHz  
2
TJ  
150  
TSTG  
-55 to +150  
REV:A  
Page 1  
QW-J0001  
Comchip Technology CO., LTD.  

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