SMD Switching Diode
CDST6-4448TI-G
RoHS Device
Features
-Fast switching speed.
SOT-23-6
-Ultra-small surface mount package.
-For general purpose switching applications.
-High conductance power dissipation.
0.119(3.02)
0.111(2.82)
0.067(1.70)
0.059(1.50)
Mechanical data
-Case:SOT-23-6, molded plastic.
0.079(2.00)
0.071(1.80)
-Terminals: Solder plated, solderable per
MIL-STD-750,method 2026.
-Mounting position: Any.
-Weight: 0.015 gram (approx.)
0.008(0.20)
0.004(0.10)
0.045(1.15)
0.041(1.05)
0.116(2.95)
0.104(2.65)
Marking: KAA
4
5
6
1
4
3
5
6
0.004(0.10)max
0.020(0.50)
0.012(0.30)
0.012(0.30)min
KAA
.
Dimensions in inches and (millimeter)
3
2
2
1
Maximum Ratings (at Ta=25°C unless otherwise noted)
Symbol
Parameter
Value
Unit
Non-repetitive peak reverse voltage
VRM
100
V
Peak repetitive reverse voltage
Working peak reverse voltage
DC Blocking voltage
VRRM
VRWM
VR
75
V
RMS Reverse voltage
VR(RMS)
IFM
53
V
Forward continuous current
Average rectified output current
500
250
mA
mA
IO
@ t < 1us
@ t < 1s
4
Non-repetitive peak forward surge current
IFSM
A
2
Power dissipation
Pd
200
625
mW
Thermal resistance junction to ambient air
Operating and storage temperature range
RθJA
°C/W
°C
Tj,TSTG
-65 to +150
Electrical Characteristics (at Ta=25°C unless otherwise noted)
Typ
Symbol
Parameter
Conditions
Max
Unit
Min
Reverse breakdown voltage
IR = 10uA
VBR
75
V
IF = 50mA
IF = 10mA
IF = 50mA
IF = 150mA
0.62
0.720
0.855
1.0
Forward voltage
Reverse current
VF
IR
V
1.25
2.5
50
30
25
uA
uA
uA
nA
VR = 75V
VR = 75V, TJ = 150°C
VR = 25V, TJ = 150°C
VR = 20V
Diode junction Capacitance
Reverse recovery time
pF
VR = 0, f = 1.0MHz
CJ
4.0
IF = IR = 10mA
Irr = 0.1 X IR,RL = 100Ω
Trr
4.0
nS
REV:A
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QW-B0048
Comchip Technology CO., LTD.