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CDST6-4448TI-G_12 PDF预览

CDST6-4448TI-G_12

更新时间: 2024-11-16 07:19:27
品牌 Logo 应用领域
上华 - COMCHIP 二极管开关
页数 文件大小 规格书
4页 103K
描述
SMD Switching Diode

CDST6-4448TI-G_12 数据手册

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SMD Switching Diode  
CDST6-4448TI-G  
RoHS Device  
Features  
-Fast switching speed.  
SOT-23-6  
-Ultra-small surface mount package.  
-For general purpose switching applications.  
-High conductance power dissipation.  
0.119(3.02)  
0.111(2.82)  
0.067(1.70)  
0.059(1.50)  
Mechanical data  
-Case:SOT-23-6, molded plastic.  
0.079(2.00)  
0.071(1.80)  
-Terminals: Solder plated, solderable per  
MIL-STD-750,method 2026.  
-Mounting position: Any.  
-Weight: 0.015 gram (approx.)  
0.008(0.20)  
0.004(0.10)  
0.045(1.15)  
0.041(1.05)  
0.116(2.95)  
0.104(2.65)  
Marking: KAA  
4
5
6
1
4
3
5
6
0.004(0.10)max  
0.020(0.50)  
0.012(0.30)  
0.012(0.30)min  
KAA  
.
Dimensions in inches and (millimeter)  
3
2
2
1
Maximum Ratings (at Ta=25°C unless otherwise noted)  
Symbol  
Parameter  
Value  
Unit  
Non-repetitive peak reverse voltage  
VRM  
100  
V
Peak repetitive reverse voltage  
Working peak reverse voltage  
DC Blocking voltage  
VRRM  
VRWM  
VR  
75  
V
RMS Reverse voltage  
VR(RMS)  
IFM  
53  
V
Forward continuous current  
Average rectified output current  
500  
250  
mA  
mA  
IO  
@ t < 1us  
@ t < 1s  
4
Non-repetitive peak forward surge current  
IFSM  
A
2
Power dissipation  
Pd  
200  
625  
mW  
Thermal resistance junction to ambient air  
Operating and storage temperature range  
RθJA  
°C/W  
°C  
Tj,TSTG  
-65 to +150  
Electrical Characteristics (at Ta=25°C unless otherwise noted)  
Typ  
Symbol  
Parameter  
Conditions  
Max  
Unit  
Min  
Reverse breakdown voltage  
IR = 10uA  
VBR  
75  
V
IF = 50mA  
IF = 10mA  
IF = 50mA  
IF = 150mA  
0.62  
0.720  
0.855  
1.0  
Forward voltage  
Reverse current  
VF  
IR  
V
1.25  
2.5  
50  
30  
25  
uA  
uA  
uA  
nA  
VR = 75V  
VR = 75V, TJ = 150°C  
VR = 25V, TJ = 150°C  
VR = 20V  
Diode junction Capacitance  
Reverse recovery time  
pF  
VR = 0, f = 1.0MHz  
CJ  
4.0  
IF = IR = 10mA  
Irr = 0.1 X IR,RL = 100Ω  
Trr  
4.0  
nS  
REV:A  
Page 1  
QW-B0048  
Comchip Technology CO., LTD.  

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