Datasheet > CDST6-4448TI-G_12

CDST6-4448TI-G_12

更新时间： 2024-11-16 07:19:27

品牌	Logo	应用领域
上华 - COMCHIP		二极管开关
页数	文件大小	规格书
4页	103K
描述
SMD Switching Diode

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数据手册

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CDST6-4448TI-G_12 数据手册

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SMD Switching Diode

CDST6-4448TI-G

RoHS Device

Features

-Fast switching speed.

SOT-23-6

-Ultra-small surface mount package.

-For general purpose switching applications.

-High conductance power dissipation.

0.119(3.02)

0.111(2.82)

0.067(1.70)

0.059(1.50)

Mechanical data

-Case:SOT-23-6, molded plastic.

0.079(2.00)

0.071(1.80)

-Terminals: Solder plated, solderable per

MIL-STD-750,method 2026.

-Mounting position: Any.

-Weight: 0.015 gram (approx.)

0.008(0.20)

0.004(0.10)

0.045(1.15)

0.041(1.05)

0.116(2.95)

0.104(2.65)

Marking: KAA

0.004(0.10)max

0.020(0.50)

0.012(0.30)

0.012(0.30)min

KAA

Dimensions in inches and (millimeter)

Maximum Ratings (at Ta=25°C unless otherwise noted)

Symbol

Parameter

Value

Unit

Non-repetitive peak reverse voltage

VRM

100

Peak repetitive reverse voltage

Working peak reverse voltage

DC Blocking voltage

VRRM

VRWM

RMS Reverse voltage

VR(RMS)

IFM

Forward continuous current

Average rectified output current

500

250

@ t < 1us

@ t < 1s

Non-repetitive peak forward surge current

IFSM

Power dissipation

200

625

Thermal resistance junction to ambient air

Operating and storage temperature range

RθJA

°C/W

°C

Tj,TSTG

-65 to +150

Electrical Characteristics (at Ta=25°C unless otherwise noted)

Typ

Symbol

Parameter

Conditions

Max

Unit

Min

Reverse breakdown voltage

IR = 10uA

VBR

IF = 50mA

IF = 10mA

IF = 50mA

IF = 150mA

0.62

0.720

0.855

1.0

Forward voltage

Reverse current

1.25

2.5

VR = 75V

VR = 75V, TJ = 150°C

VR = 25V, TJ = 150°C

VR = 20V

Diode junction Capacitance

Reverse recovery time

VR = 0, f = 1.0MHz

4.0

IF = IR = 10mA

Irr = 0.1 X IR,RL = 100Ω

Trr

4.0

REV:A

Page 1

QW-B0048

Comchip Technology CO., LTD.

12 3 4

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