Datasheet > CDST4448-G_12

CDST4448-G_12

更新时间： 2024-11-16 07:19:27

品牌	Logo	应用领域
上华 - COMCHIP		二极管开关
页数	文件大小	规格书
2页	78K
描述
SMD Switching Diode

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中文翻译

获取价格

数据手册

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CDST4448-G_12 数据手册

SMD Switching Diode

CDST4448-G

High Speed

RoHS Device

Features

SOT-23

-Fast switching diode.

0.119 (3.00)

0.110 (2.80)

-Surface mount package ideally suited for

automatic insertion.

0.056 (1.40)

0.047 (1.20)

-For general purpose switching applications.

-High conductance.

0.083 (2.10)

0.066 (1.70)

0.006 (0.15)

0.002 (0.05)

Mechanical data

-Case: SOT-23

0.103 (2.60)

0.086 (2.20)

0.044 (1.10)

0.035 (0.90)

-Terminals: Solder plated, solderable per MIL-

STD-750, Method 2026.

0.006 (0.15) max

0.007 (0.20) min

0.020 (0.50)

0.013 (0.35)

-Weight: 0.008 gram.

-Marking: KA3

Dimensions in inches and (millimeters)

Maximum Rating (at Ta=25°C unless otherwise noted)

Symbol

Parameter

Limits

100

Unit

Non-Repetitive peak reverse voltage

VRM

Peak repetitive peak reverse voltage

Working peak reverse voltage

DC blocking voltage

VRRM

VRWM

RMS reverse voltage

VR(RMS)

IFM

Forward continuous current

Average rectified output current

500

250

4.0

2.0

Peak forward surge current

Power dissipation

@1μS

@1.0S

IFSM

^OC/W

^OC

350

357

RθJA

Thermal resistance-Junction to ambient air

Storage temperature range

TSTG

-65 ~ +150

Electrical Characteristics (at Ta=25°C unless otherwise noted)

Symbol

Parameter

Test Conditions

Min

0.62

Max

Unit

VF1

VF2

VF3

VF4

IF1=5mA

0.72

0.855

1.0

IF2=10mA

IF3=100mA

IF4=150mA

Forward voltage

Reverse current

1.25

IR1

IR2

VR1=75V

VR2=20V

2.5

μA

Capacitance between terminals

Reverse recovery time

VR=0V, f=1MHz

trr

IF=IR=10mA, Irr=0.1IR,

RL=100Ω

REV:A

Page 1

QW-B0022

中文翻译

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