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CDST-2004S-G PDF预览

CDST-2004S-G

更新时间: 2024-11-16 12:54:27
品牌 Logo 应用领域
上华 - COMCHIP 二极管开关
页数 文件大小 规格书
4页 433K
描述
SMD Switching Diode

CDST-2004S-G 技术参数

是否Rohs认证: 符合生命周期:End Of Life
包装说明:R-PDSO-G3Reach Compliance Code:compliant
风险等级:5.71其他特性:HIGH RELIABILITY
配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:R-PDSO-G3
元件数量:2端子数量:3
最高工作温度:150 °C最低工作温度:-65 °C
最大输出电流:0.225 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED最大功率耗散:0.35 W
最大重复峰值反向电压:300 V最大反向恢复时间:0.05 µs
表面贴装:YES端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

CDST-2004S-G 数据手册

 浏览型号CDST-2004S-G的Datasheet PDF文件第2页浏览型号CDST-2004S-G的Datasheet PDF文件第3页浏览型号CDST-2004S-G的Datasheet PDF文件第4页 
SMD Switching Diode  
CDST-2004S-G  
(RoHS Device)  
Features  
- Design for mounting on small surface.  
SOT-23  
- High speed switching.  
0.119 (3.00)  
0.110 (2.80)  
- High mounting capability, strong surge  
withstand, high reliability.  
3
0.056 (1.40)  
0.047 (1.20)  
1
2
Mechanical data  
0.079 (2.00)  
0.071 (1.80)  
- Case: SOT-23  
0.006 (0.15)  
0.003 (0.08)  
- Terminals: Solder plated, solderable per  
MIL-STD-750, Method 2026.  
0.041 (1.05)  
0.035 (0.90)  
0.100 (2.55)  
0.089 (2.25)  
- Weight: 0.0078 grams (approx.).  
0.004 (0.10) max  
Circuit Diagram  
0.020 (0.50)  
0.012 (0.30)  
0.020 (0.50)  
0.012 (0.30)  
3
Dimensions in inches and (millimeters)  
1
2
Maximum Rating (at TA=25°C unless otherwise noted)  
Symbol  
Parameter  
Limits  
Unit  
Peak repetitive peak reverse voltage  
Working peak reverse voltage  
DC blocking voltage  
VRRM  
VRWM  
VR  
300  
240  
240  
170  
225  
625  
V
V
V
RMS reverse voltage  
VR(RMS)  
V
Forward continuous current  
Peak repetitive forward current  
IFM  
mA  
mA  
IFRM  
@t=1.0us  
@t=1.0s  
4.0  
1.0  
Peak forward surge current  
Power dissipation  
IFSM  
A
PD  
350  
357  
mW  
°C/W  
°C  
Thermal resistance, junction to ambient  
Operating junction temperature  
RθJA  
TJ , TSTG  
-65 to +150  
Electrical Characteristics (at TA=25°C unless otherwise noted)  
Symbol  
Parameter  
Reverse breakdown voltage  
Reverse leakage current  
Forward voltage  
Test Conditions  
Min  
300  
Max  
100  
Unit  
IR=100μA  
VBR  
IR  
V
VR=240V  
nA  
VR=240V , Tj = 150°C  
μA  
IF=20mA  
0.87  
1.0  
VF  
CT  
trr  
V
IF=100mA  
Diode capacitance  
VR=0V, f=1MHz  
pF  
ns  
5.0  
50  
IF = IR = 30mA,  
Irr = 3.0mA, RL = 100Ω  
Reverse recovery time  
Company reserves the right to improve product design , functions and reliability without notice.  
REV:A  
Page 1  
QW-B0054  
Comchip Technology CO., LTD.  

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