Datasheet > CDST-2004S-HF

CDST-2004S-HF

更新时间： 2024-09-29 01:25:47

品牌	Logo	应用领域
上华 - COMCHIP		/
页数	文件大小	规格书
4页	130K
描述
SMD Switching Diode

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中文翻译

获取价格

数据手册

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CDST-2004S-HF 数据手册

SMD Switching Diode

CDST-2004S-HF

RoHS Device

Halogen Free

Features

- Design for mounting on small surface.

SOT-23

0.119 (3.00)

0.110 (2.80)

- High speed switching.

0.056 (1.40)

0.047 (1.20)

- High mounting capability, strong surge

withstand, high reliability.

0.079 (2.00)

0.071 (1.80)

Mechanical data

- Case: SOT-23

0.006 (0.15)

0.003 (0.08)

0.041 (1.05)

0.035 (0.90)

0.100 (2.55)

0.089 (2.25)

- Terminals: Solder plated, solderable per

MIL-STD-750, Method 2026.

- Weight: 0.0078 grams(approx.).

0.004 (0.10) max

0.020 (0.50)

0.012 (0.30)

0.020 (0.50)

0.012 (0.30)

Circuit Diagram

Dimensions in inches and (millimeters)

Maximum Rating (at TA=25°C unless otherwise noted)

Symbol

VRRM

VRWM

Parameter

Peak repetitive peak reverse voltage

Working peak reverse voltage

DC blocking voltage

Limits

300

Unit

240

RMS reverse voltage

VR(RMS)

IFM

170

Forward continuous current

225

Peak repetitive forward current

IFRM

625

@t=1.0us

@t=1.0s

4.0

1.0

Peak forward surge current

Power dissipation

IFSM

350

357

°C/W

°C

Thermal resistance, junction to ambient

Operating junction temperature

RθJA

TJ , TSTG

-65 to +150

Electrical Characteristics (at TA=25°C unless otherwise noted)

Symbol

Parameter

Reverse breakdown voltage

Reverse leakage current

Test Conditions

Min

300

Max

100

Unit

IR=100μA

VBR

VR=240V

VR=240V , Tj = 150°C

μA

IF=20mA

0.87

1.0

Forward voltage

trr

IF=100mA

Diode capacitance

Reverse recovery time

VR=0V, f=1MHz

5.0

IF = IR = 30mA,

Irr = 3.0mA, RL = 100Ω

Company reserves the right to improve product design , functions and reliability without notice.

REV:A

Page 1

QW-J0007

Comchip Technology CO., LTD.

12 3 4

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