Datasheet > CDST116-G_12

CDST116-G_12

更新时间： 2024-09-28 07:19:31

品牌	Logo	应用领域
上华 - COMCHIP		二极管开关
页数	文件大小	规格书
2页	61K
描述
SMD Switching Diode

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中文翻译

获取价格

数据手册

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CDST116-G_12 数据手册

SMD Switching Diode

CDST116-G

RoHS Device

SOT-23

Features

0.119(3.00)

0.110(2.80)

-Low leakage current applications.

-Medium speed switching times.

0.056(1.40)

0.047(1.20)

Polarity:

0.083(2.10)

0.066(1.70)

0.006(0.15)

0.002(0.05)

0.044(1.10)

0.035(0.90)

0.103(2.60)

0.086(2.20)

0.006(0.15) max

0.007(0.20) min

0.020(0.50)

0.013(0.35)

Marking: JV

Dimensions in inches and (millimeter)

Maximum Ratings (at Ta=25°C unless otherwise noted)

Symbol

Parameter

Value

Unit

Peak repetitive peak reverse voltage

Working peak reverse voltage

DC blocking voltage

VRRM

VRWM

Forward continuous current

Power dissipation

IFM

215

250

^OC

Junction temperature

Storage temperature

150

^OC

TSTG

-55 to +150

Electrical Characteristics (at Ta=25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min

Typ.

Max

Unit

Reverse breakdown voltage

IR=100μA

V(BR)R

VF1

VF2

VF3

VF4

0.9

IF=1mA

IF=10mA

Forward voltage

IF=50mA

1.1

1.25

IF=150mA

VR=75V

Reverse current

μA

Capacitance between terminals

VR=0V, f=1MHz

IF=IR=10mA, Irr=0.1×IR,

RL=100Ω

Reverse recovery time

trr

REV:A

Page 1

QW-B0029

中文翻译

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