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CDST-16-G_12 PDF预览

CDST-16-G_12

更新时间: 2024-11-16 07:19:31
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上华 - COMCHIP 小信号开关二极管
页数 文件大小 规格书
4页 101K
描述
Small Signal Switching Diodes

CDST-16-G_12 数据手册

 浏览型号CDST-16-G_12的Datasheet PDF文件第2页浏览型号CDST-16-G_12的Datasheet PDF文件第3页浏览型号CDST-16-G_12的Datasheet PDF文件第4页 
Small Signal Switching Diodes  
CDST-16-G  
Reverse Voltage: 75 Volts  
Forward Current: 150 mA  
RoHS Device  
SOT-23  
Features  
-Design for mounting on small surface.  
-High speed switching.  
0.118(3.00)  
0.110(2.80)  
3
-High mounting capability, strong surge  
withstand, high reliability.  
0.055(1.40)  
0.047(1.20)  
1
2
0.079(2.00)  
0.071(1.80)  
Mechanical data  
-Case: SOT-23, molded plastic.  
0.006(0.15)  
0.003(0.08)  
-Terminals: solderable per MIL-STD-750,  
0.041(1.05)  
0.035(0.90)  
0.100(2.55)  
0.089(2.25)  
method 2026.  
-Approx. weight: 0.0078 grams  
0.004(0.10) max  
0.020(0.50)  
0.012(0.30)  
Circuit diagram  
0.020(0.50)  
0.012(0.30)  
3
Dimensions in inches and (millimeter)  
1
2
Maximum Ratings and Electrical Characteristics, Single Diode  
(at Ta=25°C unless otherwise noted)  
Symbol  
VRRM  
VRMS  
VDC  
Parameter  
Conditions  
Min.  
Typ.  
Max.  
75  
Units  
V
Peak Repetitive peak reverse voltage  
RMS reverse voltage  
DC Blocking voltage  
53  
V
75  
V
Forward continous current  
Average forward current  
IFM  
300  
150  
mA  
mA  
IO  
T=1.0 μS  
T=1.0 S  
2.0  
1.0  
Peak forward surge current  
A
IFSM  
Power dissipation  
PD  
225  
556  
mW  
°C/W  
V
Thermal resistance junction to ambient  
Reverse breakdown voltage  
RθJA  
IR=100µA  
V(BR)R  
75  
@IF=1mA  
0.715  
0.855  
1.0  
@IF=10mA  
@IF=50mA  
@IF=150mA  
Forward voltage  
VF  
V
1.25  
@VR=75V  
μA  
Reverse current  
IR  
1.0  
6
IF=IR=10mA, Irr=0.1*IR  
RL=100Ω  
Reverse recovery time  
Trr  
nS  
Capacitance between terminals  
Junction temperature  
pF  
°C  
°C  
VR=0V, f=1.0MHz  
CT  
TJ  
2
+150  
+150  
Storage temperature  
TSTG  
-55  
REV:A  
Page 1  
QW-B0051  
Comchip Technology CO., LTD.  

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