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CDST-19-G PDF预览

CDST-19-G

更新时间: 2024-09-28 12:54:27
品牌 Logo 应用领域
上华 - COMCHIP 二极管开关
页数 文件大小 规格书
4页 375K
描述
SMD Switching Diodes

CDST-19-G 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:ActiveReach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.67配置:SINGLE
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1 V
元件数量:1最高工作温度:150 °C
最大输出电流:0.2 A峰值回流温度(摄氏度):NOT SPECIFIED
最大重复峰值反向电压:100 V最大反向恢复时间:0.05 µs
子类别:Rectifier Diodes表面贴装:YES
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

CDST-19-G 数据手册

 浏览型号CDST-19-G的Datasheet PDF文件第2页浏览型号CDST-19-G的Datasheet PDF文件第3页浏览型号CDST-19-G的Datasheet PDF文件第4页 
SMD Switching Diodes  
-
CDST-19-G/20-G  
+
High Speed  
RoHS Device  
Features  
SOT-23  
- Fast switching diode.  
0.119 (3.00)  
0.110 (2.80)  
- Surface mount package ideally for automatic  
insertion.  
- For general purpose switching applications.  
- High conductance.  
3
0.056 (1.40)  
0.047 (1.20)  
1
2
0.083 (2.10)  
0.066 (1.70)  
Mechanical data  
0.006 (0.15)  
0.003 (0.08)  
- Case: SOT-23  
0.041 (1.05)  
0.035 (0.90)  
0.103 (2.60)  
0.086 (2.20)  
- Terminals: Solder plated, solderable per  
MIL-STD-750, Method 2026.  
- Weight: 0.008 gram.  
0.006 (0.15) max  
0.007 (0.20) min  
0.020 (0.50)  
0.012 (0.30)  
Circuit Diagram  
3
Dimensions in inches and (millimeters)  
1
2
Maximum Rating (at Ta=25°C unless otherwise noted)  
Symbol  
CDST-20-G  
Parameter  
CDST-19-G  
Unit  
Non-Repetitive peak reverse voltage  
DC blocking voltage  
VRM  
VR  
100  
100  
150  
150  
V
V
Average rectified output current  
Power dissipation  
IO  
200  
250  
mA  
mW  
OC/W  
OC  
PD  
Thermal resistance-Junction to ambient air  
Junction temperature  
RθJA  
TJ  
500  
150  
OC  
Storage temperature range  
TSTG  
-65 ~ +150  
Electrical Characteristics (at TA=25°C unless otherwise noted)  
Max  
0.1  
Unit  
V
Symbol  
Min  
Parameter  
Test Conditions  
100  
150  
CDST-19-G  
CDST-20-G  
Reverse breakdown voltage  
VBR  
IR=100uA  
CDST-19-G  
CDST-20-G  
VR=100V  
VR=150V  
Reverse leakage current  
Forward voltage  
IR  
UA  
V
IF=100mA  
IF=200mA  
1
1.25  
VF  
Junction capacitance  
Reverse recovery time  
pF  
nS  
VR=0V, f=1MHZ  
CJ  
trr  
5
IF=IR=30mA, Irr=0.1XIR  
50  
Company reserves the right to improve product design , functions and reliability without notice.  
REV:B  
Page 1  
QW-B0021  
Comchip Technology CO., LTD.  

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