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CDST193-G_12 PDF预览

CDST193-G_12

更新时间: 2024-11-16 07:19:31
品牌 Logo 应用领域
上华 - COMCHIP 二极管开关
页数 文件大小 规格书
2页 64K
描述
SMD Switching Diode

CDST193-G_12 数据手册

 浏览型号CDST193-G_12的Datasheet PDF文件第2页 
SMD Switching Diode  
CDST193-G  
RoHS Device  
SOT-23  
Features  
0.119(3.00)  
0.110(2.80)  
-Low forward voltage: VF=0.9V (Typ.)  
3
-Fast reverse recovery time: trr=1.6nS (Typ.)  
0.056(1.40)  
0.047(1.20)  
1
2
Polarity: 1. ANODE  
2. N.C.  
0.006(0.15)  
0.002(0.05)  
0.083(2.10)  
0.066(1.70)  
0.044(1.10)  
0.035(0.90)  
0.103(2.60)  
0.086(2.20)  
3. CATHODE  
Marking: F3  
0.006(0.15) max  
0.007(0.20) min  
0.020(0.50)  
0.013(0.35)  
Dimensions in inches and (millimeter)  
Maximum Ratings (at Ta=25°C unless otherwise noted)  
Symbol  
Parameter  
Value  
Unit  
Non-repetitive peak reverse voltage  
DC blocking voltage  
VRM  
VR  
85  
80  
V
V
Forward continuous current  
Average rectified output current  
Power dissipation  
IFM  
IO  
300*  
mA  
mA  
mW  
OC  
100*  
PD  
150  
Junction temperature  
TJ  
125  
OC  
Storage temperature  
TSTG  
-55 ~ +125  
*Unit rating. Total rating=Unit rating × 1.5  
Electrical Characteristics (at Ta=25°C unless otherwise noted)  
Symbol  
Parameter  
Conditions  
Min  
Min  
Max  
Unit  
Reverse breakdown voltage  
IR=100μA  
IF=1mA  
V(BR)R  
VF1  
VF2  
VF3  
IR1  
80  
V
V
V
V
0.60  
0.72  
0.90  
Forward voltage  
IF=10mA  
IF=100mA  
VR=30V  
VR=80V  
V
1.2  
0.1  
0.5  
3.0  
4.0  
V
V
μA  
μA  
pF  
nS  
Reverse current  
V
IR2  
Capacitance between terminals  
Reverse recovery time  
VR=0V, f=1MHz  
CT  
0.90  
1.60  
IF=IR=10mA, Irr=0.1×IR  
trr  
REV:A  
Page 1  
QW-B0028  

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