Datasheet > CDST193-G_12

CDST193-G_12

更新时间： 2024-11-16 07:19:31

品牌	Logo	应用领域
上华 - COMCHIP		二极管开关
页数	文件大小	规格书
2页	64K
描述
SMD Switching Diode

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中文翻译

获取价格

数据手册

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CDST193-G_12 数据手册

SMD Switching Diode

CDST193-G

RoHS Device

SOT-23

Features

0.119(3.00)

0.110(2.80)

-Low forward voltage: VF=0.9V (Typ.)

-Fast reverse recovery time: trr=1.6nS (Typ.)

0.056(1.40)

0.047(1.20)

Polarity: 1. ANODE

2. N.C.

0.006(0.15)

0.002(0.05)

0.083(2.10)

0.066(1.70)

0.044(1.10)

0.035(0.90)

0.103(2.60)

0.086(2.20)

3. CATHODE

Marking: F3

0.006(0.15) max

0.007(0.20) min

0.020(0.50)

0.013(0.35)

Dimensions in inches and (millimeter)

Maximum Ratings (at Ta=25°C unless otherwise noted)

Symbol

Parameter

Value

Unit

Non-repetitive peak reverse voltage

DC blocking voltage

VRM

Forward continuous current

Average rectified output current

Power dissipation

IFM

300*

^OC

100*

150

Junction temperature

125

^OC

Storage temperature

TSTG

-55 ~ +125

*Unit rating. Total rating=Unit rating × 1.5

Electrical Characteristics (at Ta=25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min

Max

Unit

Reverse breakdown voltage

IR=100μA

IF=1mA

V(BR)R

VF1

VF2

VF3

IR1

0.60

0.72

0.90

Forward voltage

IF=10mA

IF=100mA

VR=30V

VR=80V

1.2

0.1

0.5

3.0

4.0

μA

Reverse current

IR2

Capacitance between terminals

Reverse recovery time

VR=0V, f=1MHz

0.90

1.60

IF=IR=10mA, Irr=0.1×IR

trr

REV:A

Page 1

QW-B0028

中文翻译

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