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CDST-16-G PDF预览

CDST-16-G

更新时间: 2024-09-28 06:47:19
品牌 Logo 应用领域
上华 - COMCHIP 小信号开关二极管
页数 文件大小 规格书
4页 72K
描述
Small Signal Switching Diodes

CDST-16-G 数据手册

 浏览型号CDST-16-G的Datasheet PDF文件第2页浏览型号CDST-16-G的Datasheet PDF文件第3页浏览型号CDST-16-G的Datasheet PDF文件第4页 
COMCHIP  
Small Signal Switching Diodes  
SMD Diodes Specialist  
CDST-16-G/4148-G/914-G  
Reverse Voltage: 75 Volts  
Forward Current: 200 mA  
RoHS Device  
SOT-23  
Features  
Design for mounting on small surface.  
0.119(3.00)  
0.110(2.80)  
High speed switching.  
3
0.056(1.40)  
0.047(1.20)  
High mounting capability, strong surge  
withstand, high reliability.  
1
2
0.079(2.00)  
0.071(1.80)  
Mechanical data  
Case: SOT-23, molded plastic.  
0.006(0.15)  
0.002(0.05)  
Terminals: solderable per MIL-STD-750,  
method 2026.  
0.041(1.05)  
0.035(0.90)  
0.100(2.55)  
0.089(2.25)  
Approx. weight: 0.0078 grams  
0.004(0.10) max  
0.008(0.20) min  
0.020(0.50)  
0.012(0.30)  
Circuit diagram  
3
Dimensions in inches and (millimeter)  
1
2
Maximum Ratings and Electrical Characteristics  
(at Ta=25°C unless otherwise noted)  
Parameter  
Symbol  
Conditions  
Value  
Units  
Repetitive peak reverse voltage  
Reverse voltage  
VRRM  
VR  
75  
75  
V
V
Forward current  
IF  
200  
2
mA  
A
Peak surge forward current  
Power dissipation  
IFSM  
PD  
T=1.0 μS  
225  
mW  
@IF=1mA  
0.715  
0.855  
1.0  
@IF=10mA  
@IF=50mA  
@IF=150mA  
Maximum forward voltage  
Maximum reverse current  
VF  
IR  
V
1.25  
@VR=20V  
0.025  
2.5  
30  
@VR=75V  
μA  
@VR=25V, TJ=150°C  
@VR=75V, TJ=150°C  
50  
Maximum reverse recovery time  
Typical diode capacitance  
Maximum junction temperature  
Storage temperature  
Trr  
CJ  
4
nS  
pF  
°C  
°C  
IF=10mA, VR=6V  
VR=0V, f=1.0MHz  
2
150  
TJ  
TSTG  
-55 to +150  
REV:B  
Page 1  
QW-B0001  
Comchip Technology CO., LTD.  

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