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BYV410-600,127 PDF预览

BYV410-600,127

更新时间: 2024-11-05 21:19:31
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
11页 171K
描述
BYV410-600

BYV410-600,127 技术参数

Source Url Status Check Date:2013-06-14 00:00:00是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-220
针数:3Reach Compliance Code:not_compliant
风险等级:5.69Base Number Matches:1

BYV410-600,127 数据手册

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BYV410-600  
O-220AB  
T
Dual enhanced ultrafast power diode  
Rev. 2 — 5 August 2011  
Product data sheet  
1. Product profile  
1.1 General description  
Dual enhanced ultrafast power diode in a SOT78 (TO-220AB) plastic package.  
1.2 Features and benefits  
High thermal cycling performance  
Low on state losses  
Low thermal resistance  
Soft recovery characteristic minimizes  
power consuming oscillations  
1.3 Applications  
Dual mode (DCM and CCM) PFC  
Power Factor Correction (PFC) for  
Interleaved Topology  
1.4 Quick reference data  
Table 1.  
Symbol Parameter  
VRRM repetitive peak reverse  
voltage  
Quick reference data  
Conditions  
Min Typ Max Unit  
-
-
600  
V
IO(AV)  
average output current square-wave pulse; δ = 0.5 ;  
Tmb 92 °C; both diodes  
-
-
20  
A
conducting;  
see Figure 1; see Figure 2  
Static characteristics  
VF  
forward voltage  
IF = 10 A; Tj = 150 °C  
-
-
1.3  
1.4  
1.9  
2.1  
V
V
IF = 10 A; Tj = 25 °C;  
see Figure 4  
Dynamic characteristics  
trr  
reverse recovery time IF = 1 A; VR = 30 V;  
dIF/dt = 100 A/µs; Tj = 25 °C;  
-
-
20  
15  
35  
28  
ns  
see Figure 5  
Qr  
recovered charge  
IF = 1 A; VR = 30 V;  
dIF/dt = 100 A/µs  
nC  
 
 
 
 
 

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