Datasheet > BYV32E-150

BYV32E-150

更新时间： 2024-11-22 17:02:03

品牌	Logo	应用领域
瑞能 - WEEN		/
页数	文件大小	规格书
11页	378K
描述
Dual ultrafast power diode in a SOT78 (TO-220AB) plastic package.

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BYV32E-150 数据手册

BYV32E-150

Dual rugged ultrafast rectiﬁer diode, 20 A, 150 V

Rev.05 - 7 March 2018

Product data sheet

1. General description

Ultrafast dual epitaxial rectiﬁer diode in a SOT78 (TO-220AB) plastic package.

2. Features and beneﬁts

•

High reverse voltage surge capability

•

High thermal cycling performance

Low thermal resistance

Very low on-state loss

Soft recovery characteristic minimizes power consuming oscillations

3. Applications

•

Output rectiﬁers in high-frequency switched-mode power supplies

4. Quick reference data

Table 1. Quick reference data

Symbol Parameter

Conditions

Values

Unit

Absolute maximum rating

V_RRM

I_O(AV)

I_RRM

V_ESD

I_FRM

repetitive peak reverse

voltage

150

average output current

δ = 0.5; square-wave pulse; T_mb≤ 115 °C;

both diodes conducting; Fig. 1; Fig. 2

repetitive peak reverse δ = 0.001; t_p= 2 μs;

current

0.2

electrostatic discharge

voltage

HBM; C = 250 pF; R = 1.5 kΩ; all pins

repetitive peak forward δ = 0.5; t_p= 25 μs; T_mb≤ 115 °C;

current

per diode

I_FSM

non-repetitive peak

forward current

t_p= 10 ms; sine-wave pulse; T_j(init)= 25 °C;

per diode

125

137

t_p= 8.3 ms; sine-wave pulse; T_j(init)= 25 °C;

per diode

Symbol Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

V_F

Dynamic characteristics

t_rrreverse recovery time

forward voltage

I_F= 8 A; T_j= 150 °C; Fig. 4

0.72

0.85

I_F= 1 A; V_R= 30 V; dI_F/dt = 100 A/μs;

T_j= 25 °C; ramp recovery; Fig. 5

I_F= 0.5 A to I_R= 1 A; T_j= 25 °C;

measured at I_R= 0.25 A; step recovery;

Fig. 6

12 3 4 5 6 7...11

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