Datasheet > BYV32EB-200

BYV32EB-200

更新时间： 2024-11-24 22:11:43

品牌	Logo	应用领域
恩智浦 - NXP		二极管
页数	文件大小	规格书
7页	56K
描述
Rectifier diodes ultrafast, rugged

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数据手册
替代型号

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BYV32EB-200 数据手册

Philips Semiconductors

Product specification

Rectifier diodes

ultrafast, rugged

BYV32E, BYV32EB series

FEATURES

SYMBOL

QUICK REFERENCE DATA

V_R= 150 V/ 200 V

V_F≤ 0.85 V

• Low forward volt drop

• Fast switching

• Soft recovery characteristic

• Reverse surge capability

• High thermal cycling performance

• Low thermal resistance

I_O(AV)= 20 A

I_RRM= 0.2 A

t_rr≤ 25 ns

GENERAL DESCRIPTION

Dual, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power

supplies.

The BYV32E series is supplied in the SOT78 conventional leaded package.

The BYV32EB series is supplied in the SOT404 surface mounting package.

PINNING

SOT78 (TO220AB)

SOT404

DESCRIPTION

anode 1 (a)

cathode (k) ¹

tab

anode 2 (a)

cathode (k)

1 2 3

tab

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN.

BYV32E / BYV32EB

MAX.

UNIT

-150

-200

V_RRM

Peaqk repetitive reverse

150

200

voltage

V_RWM

V_R

Crest working reverse voltage

Continuous reverse voltage

150

200

I_O(AV)

I_FRM

I_FSM

Average rectified output current square wave; δ = 0.5;

(both diodes conducting) _mb≤ 115 ˚C

Repetitive peak forward current t = 25 µs; δ = 0.5;

per diode

Non-repetitive peak forward

current per diode

T_mb≤ 115 ˚C

t = 10 ms

125

137

t = 8.3 ms

sinusoidal; with reapplied

V_RWM(max)

Repetitive peak reverse current t_p= 2 µs; δ = 0.001

I_RRM

I_RSM

0.2

per diode

Non-repetitive peak reverse

current per diode

t_p= 100 µs

T_stg

T_j

Storage temperature

Operating junction temperature

-40

150

˚C

1 It is not possible to make connection to pin 2 of the SOT404 package

July 1998

Rev 1.200

12 3 4 5 6 7

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BYV32EB-200 替代型号

型号	品牌	替代类型	描述	数据表
BYV32EB-200,118	NXP	功能相似	BYV32EB-200

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