BYV32FSERIES

更新时间： 2024-11-20 23:39:03

品牌	Logo	应用领域
恩智浦 - NXP		整流二极管
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7页	58K
描述
Rectifier diodes ultrafast. rugged

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BYV32FSERIES 数据手册

Philips Semiconductors

Product specification

Rectifier diodes

ultrafast, rugged

BYV32F, BYV32EX series

FEATURES

SYMBOL

QUICK REFERENCE DATA

• Low forward volt drop

• Fast switching

• Soft recovery characteristic

• Reverse surge capability

• High thermal cycling performance

• Isolated mounting tab

V_R= 150 V/ 200 V

V_F≤ 0.85 V

I_O(AV)= 12 A

I_RRM= 0.2 A

t_rr≤ 25 ns

GENERAL DESCRIPTION

Dual, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power

supplies.

The BYV32F series is supplied in the SOT186 package.

The BYV32EX series is supplied in the SOT186A package.

PINNING

SOT186

SOT186A

DESCRIPTION

anode 1 (a)

cathode (k)

case

anode 2 (a)

isolated

2 3

tab

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN.

BYV32F / BYV32EX

MAX.

UNIT

-150

150

-200

200

V_RRM

V_RWM

V_R

Peak repetitive reverse voltage

Crest working reverse voltage

Continuous reverse voltage

I_O(AV)

I_FRM

I_FSM

Average rectified output current square wave

(both diodes conducting)¹

δ = 0.5; T_hs≤ 95 ˚C

Repetitive peak forward current t = 25 µs; δ = 0.5;

per diode

Non-repetitive peak forward

current per diode

T_hs≤ 95 ˚C

t = 10 ms

125

137

t = 8.3 ms

sinusoidal; with reapplied

V_RWM(max)

Repetitive peak reverse current t_p= 2 µs; δ = 0.001

I_RRM

I_RSM

0.2

per diode

Non-repetitive peak reverse

current per diode

t_p= 100 µs

T_stg

T_j

Storage temperature

Operating junction temperature

-40

150

˚C

1 Neglecting switching and reverse current losses

October 1998

Rev 1.300

12 3 4 5 6 7

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