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BYV32EXSERIES

更新时间: 2024-09-26 23:39:03
品牌 Logo 应用领域
恩智浦 - NXP 整流二极管
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7页 58K
描述
Rectifier diodes ultrafast. rugged

BYV32EXSERIES 数据手册

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Philips Semiconductors  
Product specification  
Rectifier diodes  
ultrafast, rugged  
BYV32F, BYV32EX series  
FEATURES  
SYMBOL  
QUICK REFERENCE DATA  
• Low forward volt drop  
• Fast switching  
• Soft recovery characteristic  
• Reverse surge capability  
• High thermal cycling performance  
• Isolated mounting tab  
VR = 150 V/ 200 V  
a1  
1
a2  
3
VF 0.85 V  
IO(AV) = 12 A  
IRRM = 0.2 A  
trr 25 ns  
k
2
GENERAL DESCRIPTION  
Dual, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power  
supplies.  
The BYV32F series is supplied in the SOT186 package.  
The BYV32EX series is supplied in the SOT186A package.  
PINNING  
SOT186  
SOT186A  
PIN  
DESCRIPTION  
anode 1 (a)  
cathode (k)  
case  
case  
1
2
3
anode 2 (a)  
isolated  
1
2
3
1
2 3  
tab  
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134).  
SYMBOL PARAMETER CONDITIONS MIN.  
BYV32F / BYV32EX  
MAX.  
UNIT  
-150  
150  
150  
150  
-200  
200  
200  
200  
VRRM  
VRWM  
VR  
Peak repetitive reverse voltage  
-
-
-
V
V
V
Crest working reverse voltage  
Continuous reverse voltage  
IO(AV)  
IFRM  
IFSM  
Average rectified output current square wave  
-
12  
20  
A
(both diodes conducting)1  
δ = 0.5; Ths 95 ˚C  
Repetitive peak forward current t = 25 µs; δ = 0.5;  
-
A
per diode  
Non-repetitive peak forward  
current per diode  
Ths 95 ˚C  
t = 10 ms  
-
-
125  
137  
A
A
t = 8.3 ms  
sinusoidal; with reapplied  
VRWM(max)  
Repetitive peak reverse current tp = 2 µs; δ = 0.001  
IRRM  
IRSM  
-
-
0.2  
0.2  
A
A
per diode  
Non-repetitive peak reverse  
current per diode  
tp = 100 µs  
Tstg  
Tj  
Storage temperature  
Operating junction temperature  
-40  
-
150  
150  
˚C  
˚C  
1 Neglecting switching and reverse current losses  
October 1998  
1
Rev 1.300  

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