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BYV32E-150,127

更新时间: 2024-02-03 14:03:43
品牌 Logo 应用领域
恩智浦 - NXP 超快软恢复二极管快速软恢复二极管局域网开关
页数 文件大小 规格书
9页 127K
描述
BYV32E-150

BYV32E-150,127 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:PLASTIC, SC-46, 3 PINReach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:6 weeks
风险等级:1.39应用:ULTRA FAST SOFT RECOVERY
外壳连接:CATHODE配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.15 VJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
最大非重复峰值正向电流:137 A元件数量:2
相数:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED参考标准:IEC-60134
最大重复峰值反向电压:150 V最大反向电流:30 µA
最大反向恢复时间:0.025 µs表面贴装:NO
端子面层:TIN端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED

BYV32E-150,127 数据手册

 浏览型号BYV32E-150,127的Datasheet PDF文件第2页浏览型号BYV32E-150,127的Datasheet PDF文件第3页浏览型号BYV32E-150,127的Datasheet PDF文件第4页浏览型号BYV32E-150,127的Datasheet PDF文件第5页浏览型号BYV32E-150,127的Datasheet PDF文件第6页浏览型号BYV32E-150,127的Datasheet PDF文件第7页 
BYV32E-150  
Dual rugged ultrafast rectifier diode, 20 A, 150 V  
Rev. 04 — 2 March 2009  
Product data sheet  
1. Product profile  
1.1 General description  
Ultrafast dual epitaxial rectifier diode in a SOT78 (TO-220AB) plastic package.  
1.2 Features and benefits  
„ High reverse voltage surge capability  
„ High thermal cycling performance  
„ Low thermal resistance  
„ Soft recovery characteristic minimizes  
power consuming oscillations  
„ Very low on-state loss  
1.3 Applications  
„ Output rectifiers in high-frequency  
switched-mode power supplies  
1.4 Quick reference data  
Table 1.  
Quick reference  
Symbol Parameter  
Conditions  
Min  
Typ  
Max Unit  
VRRM  
IO(AV)  
repetitive peak  
reverse voltage  
-
-
150  
V
average output  
current  
square-wave pulse; δ = 0.5;  
Tmb 115 °C; both diodes  
conducting; see Figure 1;  
see Figure 2  
-
-
20  
A
IRRM  
repetitive peak  
reverse current  
tp = 2 µs; δ = 0.001  
-
-
-
-
0.2  
8
A
VESD  
electrostatic  
HBM; C = 250 pF; R = 1.5  
kV  
discharge voltage  
k; all pins  
Dynamic characteristics  
trr  
reverse recovery  
time  
IF = 1 A; VR = 30 V;  
dIF/dt = 100 A/µs;  
Tj = 25 °C; ramp recovery;  
see Figure 5  
-
-
20  
10  
25  
20  
ns  
ns  
IR = 0.5 A; IF = 1 A;  
Tj = 25 °C; step recovery;  
measured at reverse current  
= 0.25 A; see Figure 6  
Static characteristics  
VF forward voltage  
IF = 8 A; Tj = 150 °C; see  
Figure 4  
-
0.72 0.85  
V
 
 
 
 
 

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