Datasheet > BYV32E-300P

BYV32E-300P

更新时间： 2024-02-09 11:01:35

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瑞能 - WEEN		/
页数	文件大小	规格书
10页	409K
描述
Dual ultrafast power diode

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BYV32E-300P 数据手册

BYV32E-300P

Dual ultrafast power diode

Rev.01 13 March 2019

Product data sheet

1. General description

Dual ultrafast power diode in a TO220 package.

2. Features and beneﬁts

•

Ultra low leakage current

•

High junction temperature up to 175 °C

Low on-state loss

Fast switching

Soft recovery characteristic minimizes power consuming oscillations

High reverse surge capability

High thermal cycling performance

Low thermal resistance

3. Applications

•

Home appliance power supply

Secondary rectiﬁcation

4. Quick reference data

Table 1. Quick reference data

Symbol Parameter

Conditions

Values

Unit

Absolute maximum rating

V_RRM

I_F(AV)

I_FRM

repetitive peak reverse

voltage

300

average forward current δ = 0.5 ; square-wave pulse; T_mb≤ 159 °C;

per diode; Fig. 1; Fig. 2; Fig. 3

repetitive peak forward δ = 0.5 ; t_p= 25 μs; T_mb≤ 159 °C;

current

square-wave pulse; per diode

I_FSM

non-repetitive peak

forward current

t_p= 10 ms; T_j(init)= 25 °C; sine-wave pulse;

per diode; Fig. 4

220

242

t_p= 8.3 ms; T_j(init)= 25 °C; sine-wave pulse;

per diode

Symbol Parameter

Static characteristics

Conditions

Min

Typ

Max

Unit

V_F

forward voltage

I_F= 10 A; T_j= 25 °C; per diode; Fig. 6

I_F= 10 A; T_j= 125 °C; per diode; Fig. 6

1.25

Dynamic characteristics

t_rrreverse recovery time

I_F= 1 A; V_R= 30 V; dI_F/dt = 100 A/μs;

T_j= 25 °C; per diode; Fig. 7

12 3 4 5 6 7...10

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