Datasheet > BYV32EB-200

BYV32EB-200

更新时间： 2024-09-27 17:01:51

品牌	Logo	应用领域
瑞能 - WEEN		/
页数	文件大小	规格书
10页	406K
描述
Dual ultrafast power diode in a?TO263 (D2PAK) surface-mountable plastic package.

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BYV32EB-200 数据手册

BYV32EB-200

Dual ultrafast power diode

Rev.02 - 26 November 2019

Product data sheet

1. General description

Dual ultrafast power diode in a TO263 (D2PAK) surface-mountable plastic package.

2. Features and beneﬁts

•

High reverse voltage surge capability

•

High thermal cycling performance

Low thermal resistance

Very low on-state loss

Soft recovery characteristic minimizes power consuming oscillations

Surface-mountable package

3. Applications

•

Output rectiﬁers in high-frequency switched-mode power supplies

4. Quick reference data

Table 1. Quick reference data

Symbol Parameter

Conditions

Values

Unit

Absolute maximum rating

V_RRM

I_O(AV)

I_RRM

repetitive peak reverse

voltage

200

0.2

average output current

δ = 0.5; square-wave pulse; T_mb≤ 115 °C;

both diodes conducting; Fig. 1; Fig. 2

repetitive peak reverse δ = 0.001; t_p= 2 μs;

current

V_ESD

electrostatic discharge

voltage

HBM; C = 250 pF; R = 1.5 kΩ; all pins

Static characteristics

V_Fforward voltage

I_F= 8 A; T_j= 150 °C; Fig. 4

I_F= 20 A; T_j= 25 °C

0.72

0.85

1.15

Dynamic characteristics

t_rrreverse recovery time

I_F= 1 A; V_R= 30 V; dI_F/dt = 100 A/μs;

T_j= 25 °C; ramp recovery; Fig. 5

12 3 4 5 6 7...10

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