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BUK856-400IZ PDF预览

BUK856-400IZ

更新时间： 2024-01-05 10:02:31
品牌 Logo 应用领域
恩智浦 - NXP 晶体晶体管双极性晶体管栅
页数 文件大小 规格书
8页 85K
描述
Insulated Gate Bipolar Transistor Protected Logic-Level IGBT

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中文翻译

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BUK856-400IZ 数据手册

 浏览型号BUK856-400IZ的Datasheet PDF文件第2页浏览型号BUK856-400IZ的Datasheet PDF文件第3页浏览型号BUK856-400IZ的Datasheet PDF文件第4页浏览型号BUK856-400IZ的Datasheet PDF文件第5页浏览型号BUK856-400IZ的Datasheet PDF文件第6页浏览型号BUK856-400IZ的Datasheet PDF文件第7页 
Philips Semiconductors  
Product specification  
Insulated Gate Bipolar Transistor  
Protected Logic-Level IGBT  
BUK856-400 IZ  
GENERAL DESCRIPTION  
QUICK REFERENCE DATA  
Protected N-channel logic-level  
insulated gate bipolar power  
transistor in a plastic envelope,  
intended for automotive ignition  
applications. The device has  
built-in zener diodes providing  
active collector voltage clamping  
and ESD protection up to 2 kV.  
SYMBOL PARAMETER  
MIN. TYP. MAX. UNIT  
V(CL)CER  
VCEsat  
IC  
Collector-emitter clamp voltage  
Collector-emitter on-state voltage  
Collector current (DC)  
350 400 500  
V
V
A
2.2  
20  
Ptot  
Total power dissipation  
100  
300  
W
mJ  
ECERS  
Clamped energy dissipation  
PINNING - TO220AB  
PIN CONFIGURATION  
SYMBOL  
PIN  
1
DESCRIPTION  
c
tab  
gate  
2
collector  
emitter  
g
3
tab collector  
1 2 3  
e
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134)  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
VCE  
Collecter-emitter voltage  
tp ≤ 500 µs  
-
500  
V
VCE  
±VGE  
IC  
IC  
ICM  
Collector-emitter voltage  
Gate-emitter voltage  
Collector current (DC)  
Collector current (DC)  
Continuous  
-
Tmb = 100 ˚C  
Tmb = 25 ˚C  
-20  
50  
12  
10  
20  
25  
V
V
A
A
A
-
-
-
-
Collector current (pulsed peak value, Tmb = 25 ˚C; tp ≤ 10 ms;  
on-state) CE ≤ 15 V  
Collector current (clamped inductive 1 kΩ ≤ RG ≤ 10 kΩ  
V
ICLM  
-
-
-
-
10  
300  
125  
5
A
load)  
ECERS  
Clamped turn-off energy  
(non-repetitive)  
Tmb = 25 ˚C; IC = 10 A; RG = 1 kΩ;  
see Figs. 23,24  
mJ  
mJ  
mJ  
1
ECERR  
Clamped turn-off energy (repetitive) Tmb = 100 ˚C; IC = 8 A; RG = 1 kΩ;  
f = 50 Hz  
IE = 1 A; f = 50 Hz  
1
EECR  
Reverse avalanche energy  
(repetitive)  
Ptot  
Tstg  
Tj  
Total power dissipation  
Storage temperature  
Operating Junction Temperature  
Tmb = 25 ˚C  
-
-
-
125  
150  
150  
W
˚C  
˚C  
-55  
-40  
ESD LIMITING VALUE  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
VC  
Electrostatic discharge capacitor  
voltage  
Human body model  
(100 pF, 1.5 kΩ)  
-
2
kV  
1 This applies to short-term operation in ignition circuits with open-secondary ignition coil.  
December 1996  
1
Rev. 1.200  
12345678

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