Datasheet > BUK7S1R2-40H

BUK7S1R2-40H

更新时间： 2024-11-28 11:14:59

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
13页	326K
描述
N-channel 40 V, 1.2 mΩ standard level MOSFET in LFPAK88Production

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BUK7S1R2-40H 数据手册

BUK7S1R2-40H

N-channel 40 V, 1.2 mΩ standard level MOSFET in LFPAK88

28 September 2022

Product data sheet

1. General description

Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction

technology, housed in a copper-clip LFPAK88 package. This product has been fully designed and

qualified to meet beyond AEC-Q101 requirements delivering high performance and reliability.

2. Features and benefits

•

Fully automotive qualified to beyond AEC-Q101:

-55 °C to +175 °C rating suitable for thermally demanding environments

LFPAK88 package:

•

Designed for smaller footprint and improved power density over older wire bond packages

such as D²PAK for today’s space constrained high power automotive applications

•

Thin package and copper clip enables LFPAK88 to be highly efficient thermally

•

LFPAK copper clip technology enabling improvements over wire bond packages by:

•

Increased maximum current capability and excellent current spreading

Improved R_DSon

Low source inductance

Low thermal resistance R_th

•

LFPAK Gull Wing leads:

•

Flexible leads enabling high Board Level Reliability absorbing mechanical and thermal

cycling stress, unlike traditional QFN packages

•

Visual (AOI) soldering inspection, no need for expensive x-ray equipment

Easy solder wetting for good mechanical solder joint

Unique 40 V Trench 9 superjunction technology:

•

Reduced cell pitch and superjunction platform enables lower R_DSonin the same footprint

Improved SOA and avalanche capability compared to standard TrenchMOS

Tight V_GS(th)limits enable easy paralleling of MOSFETs

3. Applications

•

12 V automotive systems

48 V DC/DC systems (on 12 V secondary side)

Higher power motors, lamps and solenoid control

Reverse polarity protection

LED lighting

Ultra high performance power switching

4. Quick reference data

Table 1. Quick reference data

Symbol

V_DS

Parameter

Conditions

Min

Typ

Max

Unit

drain-source voltage

drain current

25 °C ≤ T_j≤ 175 °C

V_GS= 10 V; T_mb= 25 °C; Fig. 2

I_D

[1]

300

294

P_tot

total power dissipation T_mb= 25 °C; Fig. 1

12 3 4 5 6 7...13

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与BUK7S1R2-40H相关器件

型号	品牌	获取价格	描述	数据表
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BUK7S2R0-40H	NEXPERIA	获取价格	N-channel 40 V, 2 mOhm standard level MOSFET in LFPAK88Production
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BUK7V4R2-40H	NEXPERIA	获取价格	Dual N-channel 40 V, 4.2 mOhm standard level MOSFET in LFPAK56D (half-bridge configuration
BUK7Y07-30B	NXP	获取价格	N-channel TrenchMOS standard level FET
BUK7Y07-30B,115	NXP	获取价格	BUK7Y07-30B - N-channel TrenchMOS standard level FET SOIC 4-Pin
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BUK7Y102-100B	NXP	获取价格	N-channel TrenchMOS standard level FET
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