Datasheet > BUK7Y12-55B

BUK7Y12-55B

更新时间： 2024-11-28 11:12:23

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
14页	790K
描述
N-channel TrenchMOS standard level FETProduction

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BUK7Y12-55B 数据手册

BUK7Y12-55B

N-channel TrenchMOS standard level FET

Rev. 03 — 7 April 2010

Product data sheet

1. Product profile

1.1 General description

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology.

This product has been designed and qualified to the appropriate AEC standard for use

in automotive critical applications.

1.2 Features and benefits

Q101 compliant

Suitable for thermally demanding

environments due to 175 °C rating

Suitable for standard level gate drive

sources

1.3 Applications

12 V and 24 V loads

General purpose power switching

Motors, lamps and solenoids

Advanced braking systems (ABS)

Automotive systems

1.4 Quick reference data

Table 1.

Symbol

V_DS

Quick reference data

Parameter

Conditions

Min Typ Max Unit

drain-source

voltage

T_j≥ 25 °C; T_j≤ 175 °C

I_D

drain current

V_GS= 10 V; T_mb= 25 °C;

see Figure 1; see Figure 4

61.8

105

P_tot

total power

dissipation

T_mb= 25 °C; see Figure 2

Static characteristics

R_DSondrain-source

V_GS= 10 V; I_D= 20 A;

T_j= 25 °C; see Figure 13;

see Figure 12

8.2

mΩ

on-state

resistance

Avalanche ruggedness

E_DS(AL)S

non-repetitive

drain-source

I_D= 61.8 A; V_sup≤ 55 V;

R_GS= 50 Ω; V_GS= 10 V;

129 mJ

avalanche energy T_j(init)= 25 °C; unclamped

Dynamic characteristics

Q_GDgate-drain charge I_D= 20 A; V_DS= 44 V;

V_GS= 10 V; see Figure 14

14.8

12 3 4 5 6 7...14

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