Datasheet > BUK7Y18-75B,115

BUK7Y18-75B,115

更新时间： 2024-11-27 20:52:35

品牌	Logo	应用领域
恩智浦 - NXP		开关脉冲晶体管
页数	文件大小	规格书
13页	304K
描述
BUK7Y18-75B - N-channel TrenchMOS standard level FET SOIC 4-Pin

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技术参数
数据手册

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BUK7Y18-75B,115 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
零件包装代码：	SOIC	针数：	4
Reach Compliance Code：	not_compliant	风险等级：	5.74
Base Number Matches：	1

BUK7Y18-75B,115 数据手册

BUK7Y18-75B

N-channel TrenchMOS standard level FET

1 March 2013

Product data sheet

1. General description

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This

product has been designed and qualified to the appropriate AEC standard for use in

automotive critical applications.

2. Features and benefits

Q101 compliant

•

Suitable for standard level gate drive sources

Suitable for thermally demanding environments due to 175 °C rating

3. Applications

12 V, 24 V and 42 V loads

Automotive systems

DC-to-DC converters

•

Engine management

General purpose power switching

Motors, lamps and solenoids

Transmission control

4. Quick reference data

Table 1.

Symbol

Quick reference data

Parameter

Conditions

Min

Typ

Max

Unit

V_DS

I_D

drain-source voltage

drain current

T_j≥ 25 °C; T_j≤ 175 °C

V_GS= 10 V; T_mb= 25 °C; Fig. 1; Fig. 4

P_tot

total power dissipation T_mb= 25 °C; Fig. 2

105

Static characteristics

R_DSondrain-source on-state

resistance

Dynamic characteristics

Q_GDgate-drain charge

V_GS= 10 V; I_D= 20 A; T_j= 25 °C;

Fig. 12; Fig. 13

13.8

mΩ

I_D= 20 A; V_DS= 60 V; V_GS= 10 V;

Fig. 14

14.24

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