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BUK7Y18-75B,115 PDF预览

BUK7Y18-75B,115

更新时间: 2024-02-29 02:27:22
品牌 Logo 应用领域
恩智浦 - NXP 开关脉冲晶体管
页数 文件大小 规格书
13页 304K
描述
BUK7Y18-75B - N-channel TrenchMOS standard level FET SOIC 4-Pin

BUK7Y18-75B,115 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:SOIC针数:4
Reach Compliance Code:not_compliant风险等级:5.74
Base Number Matches:1

BUK7Y18-75B,115 数据手册

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6
5
K
BUK7Y18-75B  
N-channel TrenchMOS standard level FET  
A
P
F
L
1 March 2013  
Product data sheet  
1. General description  
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic  
package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This  
product has been designed and qualified to the appropriate AEC standard for use in  
automotive critical applications.  
2. Features and benefits  
Q101 compliant  
Suitable for standard level gate drive sources  
Suitable for thermally demanding environments due to 175 °C rating  
3. Applications  
12 V, 24 V and 42 V loads  
Automotive systems  
DC-to-DC converters  
Engine management  
General purpose power switching  
Motors, lamps and solenoids  
Transmission control  
4. Quick reference data  
Table 1.  
Symbol  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
75  
Unit  
V
VDS  
ID  
drain-source voltage  
drain current  
Tj ≥ 25 °C; Tj ≤ 175 °C  
VGS = 10 V; Tmb = 25 °C; Fig. 1; Fig. 4  
-
-
-
-
-
-
49  
A
Ptot  
total power dissipation Tmb = 25 °C; Fig. 2  
105  
W
Static characteristics  
RDSon drain-source on-state  
resistance  
Dynamic characteristics  
QGD gate-drain charge  
VGS = 10 V; ID = 20 A; Tj = 25 °C;  
Fig. 12; Fig. 13  
-
-
13.8  
18  
-
mΩ  
nC  
ID = 20 A; VDS = 60 V; VGS = 10 V;  
Fig. 14  
14.24  
Scan or click this QR code to view the latest information for this product  
 
 
 
 

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