Datasheet > BUK7Y13-40B_08

BUK7Y13-40B_08

更新时间： 2024-11-24 09:02:27

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
12页	191K
描述
N-channel TrenchMOS standard level FET

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BUK7Y13-40B_08 数据手册

BUK7Y13-40B

N-channel TrenchMOS standard level FET

Rev. 03 — 26 May 2008

Product data sheet

1. Product profile

1.1 General description

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This

product has been designed and qualified to the appropriate AEC standard for use in

automotive critical applications.

1.2 Features and benefits

175 °C rated

Q101 compliant

Suitable for standard level gate drive

sources

Suitable for thermally demanding

environments due to 175 °C rating

1.3 Applications

12 V loads

Air bag

Automotive ABS systems

Fuel pump and injection

Automotive transmission control

Motors, lamps and solenoids

1.4 Quick reference data

Table 1.

Quick reference

Symbol Parameter

Conditions

Min Typ Max Unit

V_DS

I_D

drain-source voltage

drain current

T_j≥ 25 °C; T_j≤ 175 °C

V_GS= 10 V; T_mb= 25 °C;

see Figure 1 and 4

P_tot

total power dissipation T_mb= 25 °C; see Figure 2

Dynamic characteristics

Q_GDgate-drain charge

I_D= 10 A; V_DS= 32 V;

V_GS= 10 V; see Figure 14

Static characteristics

R_DSondrain-source on-state

resistance

V_GS= 10 V; I_D= 25 A;

T_j= 25 °C; see Figure 13 and

mΩ

Avalanche ruggedness

E_DS(AL)Snon-repetitive

drain-source

I_D= 58 A; V_sup≤ 40 V;

R_GS= 50 Ω; V_GS= 10 V;

T_j(init)= 25 °C; unclamped

avalanche energy

12 3 4 5 6 7...12

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