Datasheet > BUK7Y07-30B,115

BUK7Y07-30B,115

更新时间： 2024-11-27 14:48:11

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
14页	188K
描述
BUK7Y07-30B - N-channel TrenchMOS standard level FET SOIC 4-Pin

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技术参数
数据手册

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BUK7Y07-30B,115 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
零件包装代码：	SOIC	针数：	4
Reach Compliance Code：	not_compliant	风险等级：	5.76
Base Number Matches：	1

BUK7Y07-30B,115 数据手册

BUK7Y07-30B

N-channel TrenchMOS standard level FET

Rev. 03 — 7 April 2010

Product data sheet

1. Product profile

1.1 General description

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This

product has been designed and qualified to the appropriate AEC standard for use in

automotive critical applications.

1.2 Features and benefits

Low conduction losses due to low

Suitable for standard level gate drive

on-state resistance

sources

Q101 compliant

Suitable for thermally demanding

environments due to 175 °C rating

1.3 Applications

12 V Loads

General purpose power switch

Motors, lamps and solenoids

Automotive systems

1.4 Quick reference data

Table 1.

Symbol

V_DS

Quick reference data

Parameter

Conditions

Min Typ Max Unit

drain-source

voltage

T_j≥ 25 °C; T_j≤ 175 °C

[1]

I_D

drain current

V_GS= 10 V; T_mb= 25 °C;

see Figure 1; see Figure 4

P_tot

total power

dissipation

T_mb= 25 °C; see Figure 2

105

Static characteristics

R_DSondrain-source

V_GS= 10 V; I_D= 25 A;

T_j= 25 °C; see Figure 12;

see Figure 13

mΩ

on-state

resistance

Avalanche ruggedness

E_DS(AL)S

non-repetitive

drain-source

I_D= 75 A; V_sup≤ 30 V;

R_GS= 50 Ω; V_GS= 10 V;

198 mJ

avalanche energy T_j(init)= 25 °C; unclamped

Dynamic characteristics

Q_GDgate-drain charge I_D= 25 A; V_DS= 24 V;

V_GS= 10 V; see Figure 14

10.7

12 3 4 5 6 7...14

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