Datasheet > BUK7V4R2-40H

BUK7V4R2-40H

更新时间： 2023-09-03 20:35:08

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
13页	306K
描述
Dual N-channel 40 V, 4.2 mOhm standard level MOSFET in LFPAK56D (half-bridge configuration)Production

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BUK7V4R2-40H 数据手册

BUK7V4R2-40H

Dual N-channel 40 V, 4.2 mOhm standard level MOSFET in

LFPAK56D (half-bridge configuration)

9 May 2023

Product data sheet

1. General description

Dual, standard level N-channel MOSFET in an LFPAK56D package

(half-bridge configuration), using Trench 9 TrenchMOS technology. This

product has been designed and qualified to AEC-Q101.

An internal connection is made between the source (S1) of the high-

side FET to the drain (D2) of the low-side FET, making the device ideal

to use as a half-bridge switch in high-performance automotive PWM

applications.

S1, D2

aaa-028081

2. Features and benefits

•

LFPAK56D package with half-bridge configuration enables:

•

Reduced PCB layout complexity

PCB shrinkage through reduced component footprint for 3-phase motor drive

Improved system level R_th(j-amb)due to optimized package design

Lower parasitic inductance to support higher efficiency

Footprint compatibility with LFPAK56D Dual package

Advanced AEC-Q101 grade Trench 9 silicon technology:

•

Low power losses, high power density

Superior avalanche performance

Repetitive avalanche rated

•

LFPAK copper clip packaging provides high robustness and reliability

Gull wing leads support high manufacturability and Automated Optical Inspection (AOI)

3. Applications

•

12 V automotive systems

Powertrain, chassis, body and infotainment applications

Brushless or brushed DC motor drive

DC-to-DC systems

LED lighting

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Limiting values FET1 and FET2

V_DS

I_D

drain-source voltage

drain current

25 °C ≤ T_j≤ 175 °C

V_GS= 10 V; T_mb= 25 °C; Fig. 2

[1]

P_tot

total power dissipation T_mb= 25 °C; Fig. 1

12 3 4 5 6 7...13

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