Datasheet > BUK7Y10-30B

BUK7Y10-30B

更新时间： 2024-11-27 06:44:39

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
14页	196K
描述
N-channel TrenchMOS standard level FET

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BUK7Y10-30B 数据手册

BUK7Y10-30B

N-channel TrenchMOS standard level FET

Rev. 03 — 9 April 2010

Product data sheet

1. Product profile

1.1 General description

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This

product has been designed and qualified to the appropriate AEC standard for use in

automotive critical applications.

1.2 Features and benefits

Q101 compliant

Suitable for thermally demanding

environments due to 175 °C rating

Suitable for standard level gate drive

sources

1.3 Applications

12 V Loads

General purpose power switch

Motors, lamps and solenoids

Automotive systems

1.4 Quick reference data

Table 1.

Symbol

V_DS

Quick reference data

Parameter

Conditions

Min Typ Max Unit

drain-source

voltage

T_j≥ 25 °C; T_j≤ 175 °C

I_D

drain current

V_GS= 10 V; T_mb= 25 °C;

see Figure 1; see Figure 4

P_tot

total power

dissipation

T_mb= 25 °C; see Figure 2

Static characteristics

R_DSondrain-source

V_GS= 10 V; I_D= 25 A;

T_j= 25 °C; see Figure 12;

see Figure 13

7.8

mΩ

on-state

resistance

Avalanche ruggedness

E_DS(AL)S

non-repetitive

drain-source

I_D= 67 A; V_sup≤ 30 V;

R_GS= 50 Ω; V_GS= 10 V;

101 mJ

avalanche energy T_j(init)= 25 °C; unclamped

Dynamic characteristics

Q_GDgate-drain charge I_D= 25 A; V_DS= 24 V;

V_GS= 10 V; see Figure 14

5.6

12 3 4 5 6 7...14

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