Datasheet > BUK7Y12-100EX

BUK7Y12-100EX

更新时间： 2024-02-11 12:16:14

品牌	Logo	应用领域
恩智浦 - NXP		局域网开关脉冲晶体管
页数	文件大小	规格书
13页	292K
描述
BUK7Y12-100E - N-channel 100 V, 12 mΩ standard level MOSFET in LFPAK56 SOIC 4-Pin

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

BUK7Y12-100EX 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
零件包装代码：	SOIC	针数：	4
Reach Compliance Code：	unknown	风险等级：	5.72
配置：	Single	最大漏极电流 (Abs) (ID)：	85 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JESD-609代码：	e3
湿度敏感等级：	1	工作模式：	ENHANCEMENT MODE
最高工作温度：	175 °C	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	238 W	子类别：	FET General Purpose Power
表面贴装：	YES	端子面层：	Tin (Sn)
Base Number Matches：	1

BUK7Y12-100EX 数据手册

BUK7Y12-100E

N-channel 100 V, 12 mΩ standard level MOSFET in LFPAK56

8 May 2013

Product data sheet

1. General description

Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using

TrenchMOS technology. This product has been designed and qualified to AEC Q101

standard for use in high performance automotive applications.

2. Features and benefits

Q101 compliant

Repetitive avalanche rated

Suitable for thermally demanding environments due to 175 °C rating

True standard level gate with V_GS(th)rating of greater than 1 V at 175 °C

•

3. Applications

12 V, 24 V and 48 V Automotive systems

Motors, lamps and solenoid control

Transmission control

•

Ultra high performance power switching

4. Quick reference data

Table 1.

Symbol

Quick reference data

Parameter

Conditions

Min

Typ

Max

100

Unit

V_DS

I_D

drain-source voltage

drain current

T_j≥ 25 °C; T_j≤ 175 °C

V_GS= 10 V; T_mb= 25 °C; Fig. 1

P_tot

total power dissipation T_mb= 25 °C; Fig. 2

238

Static characteristics

R_DSondrain-source on-state

resistance

Dynamic characteristics

Q_GDgate-drain charge

V_GS= 10 V; I_D= 25 A; T_j= 25 °C;

Fig. 11

8.1

mΩ

V_GS= 10 V; I_D= 25 A; V_DS= 80 V;

T_j= 25 °C; Fig. 13; Fig. 14

Scan or click this QR code to view the latest information for this product

12 3 4 5 6 7...13

中文翻译

下载PDF

与BUK7Y12-100EX相关器件

型号	品牌	获取价格	描述	数据表
BUK7Y12-40E	NXP	获取价格	N-channel 40 V, 12 mÎ© standard level MOSFET
BUK7Y12-40E	NEXPERIA	获取价格	N-channel 40 V, 12 mΩ standard level MOSFET i
BUK7Y12-40EX	NXP	获取价格	BUK7Y12-40E - N-channel 40 V, 12 mΩ standard
BUK7Y12-55B	NXP	获取价格	N-channel TrenchMOS standard level FET
BUK7Y12-55B	NEXPERIA	获取价格	N-channel TrenchMOS standard level FETProduction
BUK7Y12-55B,115	NXP	获取价格	BUK7Y12-55B - N-channel TrenchMOS standard level FET SOIC 4-Pin
BUK7Y13-40B	NXP	获取价格	N-channel TrenchMOS standard level FET
BUK7Y13-40B	NEXPERIA	获取价格	N-channel TrenchMOS standard level FETProduction
BUK7Y13-40B,115	NXP	获取价格	BUK7Y13-40B - N-channel TrenchMOS standard level FET SOIC 4-Pin
BUK7Y13-40B_08	NXP	获取价格	N-channel TrenchMOS standard level FET