BSS84LT1

更新时间： 2024-01-10 20:49:13

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
4页	71K
描述
Power MOSFET 130 mA, 50 V

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替代型号

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BSS84LT1 数据手册

BSS84LT1

Power MOSFET

130 mA, 50 V

P−Channel SOT−23

These miniature surface mount MOSFETs reduce power loss

conserve energy, making this device ideal for use in small power

management circuitry. Typical applications are DC−DC converters,

load switching, power management in portable and battery−powered

products such as computers, printers, cellular and cordless telephones.

http://onsemi.com

130 mA, 50 V R_DS(on)= 10 W

Features

• Energy Efficient

• Miniature SOT−23 Surface Mount Package Saves Board Space

• Pb−Free Package is Available

P−Channel

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Drain−to−Source Voltage

Gate−to−Source Voltage − Continuous

Drain Current

Symbol

Value

Unit

Vdc

DSS

± 20

− Continuous @ T = 25°C

130

520

SOT−23

− Pulsed Drain Current (t ≤ 10 ms)

CASE 318

STYLE 21

Total Power Dissipation @ T = 25°C

225

Operating and Storage Temperature

Range

T , T

− 55 to

150

°C

stg

Thermal Resistance − Junction−to−Ambient

556

260

°C/W

°C

MARKING DIAGRAM & PIN ASSIGNMENT

Maximum Lead Temperature for Soldering

Purposes, for 10 seconds

Drain

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits

are exceeded, device functional operation is not implied, damage may occur

and reliability may be affected.

= Device Code

= Date Code

PDM

Gate

Source

ORDERING INFORMATION

†

Device

Package

Shipping

BSS84LT1

SOT−23

3000 Tape & Reel

BSS84LT1G

SOT−23

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Semiconductor Components Industries, LLC, 2004

Publication Order Number:

June, 2004 − Rev. 5

BSS84LT1/D

12 3 4

中文翻译

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BSS84LT1 替代型号

型号	品牌	替代类型	描述	数据表
BSS84	ONSEMI	类似代替	P沟道增强型场效应晶体管-50V，-0.13A，10Ω
BSS84LT1G	ONSEMI	类似代替	Power MOSFET 130 mA, 50 V
BSS84-7-F	DIODES	功能相似	P-CHANNEL ENHANCEMENT MODE MOSFET

与BSS84LT1相关器件

型号	品牌	获取价格	描述	数据表
BSS84LT1/D	ETC	获取价格	Power MOSFET 130 mAmps， 50 Volts
BSS84LT1_12	ONSEMI	获取价格	Power MOSFET Single P-Channel SOT-23 -50 V, 10
BSS84LT1G	ONSEMI	获取价格	Power MOSFET 130 mA, 50 V
BSS84LT3	ETC	获取价格	TRANSISTOR \| MOSFET \| P-CHANNEL \| 50V V(BR)DSS \| 100MA I(D) \| TO-236AB
BSS84LT7G	ONSEMI	获取价格	Small Signal Field-Effect Transistor, 0.13A I(D), 50V, 1-Element, P-Channel, Silicon, Meta
BSS84-NL	FAIRCHILD	获取价格	â0.13A, â50V. RDS(ON) = 10Î© @ VGS = â5
BSS84P	INFINEON	获取价格	SIPMOS Small-Signal-Transistor
BSS84P_06	INFINEON	获取价格	SIPMOS Small-Signal-Transistor
BSS84P-E6327	INFINEON	获取价格	Small Signal Field-Effect Transistor, 0.17A I(D), 60V, 1-Element, P-Channel, Silicon, Meta
BSS84PH6327XTSA2	INFINEON	获取价格	Small Signal Field-Effect Transistor, 0.17A I(D), 60V, 1-Element, P-Channel, Silicon, Meta

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