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BSS84LT1G PDF预览

BSS84LT1G

更新时间: 2024-01-22 14:00:15
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号场效应晶体管开关光电二极管PC
页数 文件大小 规格书
4页 71K
描述
Power MOSFET 130 mA, 50 V

BSS84LT1G 技术参数

是否无铅:不含铅生命周期:Active
零件包装代码:SOT-23包装说明:ROHS COMPLIANT, MINIATURE, CASE 318-08, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
Factory Lead Time:10 weeks风险等级:0.46
Samacsys Confidence:3Samacsys Status:Released
Samacsys PartID:224528Samacsys Pin Count:3
Samacsys Part Category:MOSFET (P-Channel)Samacsys Package Category:SOT23 (3-Pin)
Samacsys Footprint Name:SOT-23 (TO-236) CASE 318-08Samacsys Released Date:2015-07-28 07:02:39
Is Samacsys:N配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:50 V最大漏极电流 (Abs) (ID):0.13 A
最大漏极电流 (ID):0.13 A最大漏源导通电阻:10 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-236
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):0.225 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:10晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

BSS84LT1G 数据手册

 浏览型号BSS84LT1G的Datasheet PDF文件第2页浏览型号BSS84LT1G的Datasheet PDF文件第3页浏览型号BSS84LT1G的Datasheet PDF文件第4页 
BSS84LT1  
Power MOSFET  
130 mA, 50 V  
P−Channel SOT−23  
These miniature surface mount MOSFETs reduce power loss  
conserve energy, making this device ideal for use in small power  
management circuitry. Typical applications are DC−DC converters,  
load switching, power management in portable and battery−powered  
products such as computers, printers, cellular and cordless telephones.  
http://onsemi.com  
130 mA, 50 V RDS(on) = 10 W  
Features  
Energy Efficient  
Miniature SOT−23 Surface Mount Package Saves Board Space  
Pb−Free Package is Available  
P−Channel  
3
1
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Rating  
Drain−to−Source Voltage  
Gate−to−Source Voltage − Continuous  
Drain Current  
Symbol  
Value  
50  
Unit  
Vdc  
Vdc  
mA  
V
DSS  
2
V
GS  
± 20  
3
− Continuous @ T = 25°C  
I
D
130  
520  
A
SOT−23  
− Pulsed Drain Current (t 10 ms)  
I
p
DM  
CASE 318  
STYLE 21  
1
Total Power Dissipation @ T = 25°C  
P
D
225  
mW  
A
2
Operating and Storage Temperature  
Range  
T , T  
− 55 to  
150  
°C  
J
stg  
Thermal Resistance − Junction−to−Ambient  
R
556  
260  
°C/W  
°C  
q
JA  
MARKING DIAGRAM & PIN ASSIGNMENT  
3
Maximum Lead Temperature for Soldering  
Purposes, for 10 seconds  
T
L
Drain  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits  
are exceeded, device functional operation is not implied, damage may occur  
and reliability may be affected.  
PD  
M
= Device Code  
= Date Code  
PDM  
1
Gate  
2
Source  
ORDERING INFORMATION  
Device  
Package  
Shipping  
BSS84LT1  
SOT−23  
3000 Tape & Reel  
3000 Tape & Reel  
BSS84LT1G  
SOT−23  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Semiconductor Components Industries, LLC, 2004  
1
Publication Order Number:  
June, 2004 − Rev. 5  
BSS84LT1/D  

BSS84LT1G 替代型号

型号 品牌 替代类型 描述 数据表
BSS84 ONSEMI

类似代替

P沟道增强型场效应晶体管-50V,-0.13A,10Ω
BSS84LT1 ONSEMI

类似代替

Power MOSFET 130 mA, 50 V
BSS84-7-F DIODES

功能相似

P-CHANNEL ENHANCEMENT MODE MOSFET

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