是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.21.00.95 |
风险等级: | 5.56 | 其他特性: | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 60 V |
最大漏极电流 (Abs) (ID): | 0.17 A | 最大漏极电流 (ID): | 0.17 A |
最大漏源导通电阻: | 12 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
最大反馈电容 (Crss): | 3 pF | JESD-30 代码: | R-PDSO-G3 |
JESD-609代码: | e3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | P-CHANNEL |
最大功率耗散 (Abs): | 0.36 W | 参考标准: | AEC-Q101 |
子类别: | Other Transistors | 表面贴装: | YES |
端子面层: | Matte Tin (Sn) | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BSS84PW | INFINEON |
获取价格 |
SIPMOS Small-Signal-Transistor | |
BSS84PWH6327 | INFINEON |
获取价格 |
Small Signal Field-Effect Transistor, 0.15A I(D), 60V, 1-Element, P-Channel, Silicon, Meta | |
BSS84PWH6327XTSA1 | INFINEON |
获取价格 |
Small Signal Field-Effect Transistor, 0.15A I(D), 60V, 1-Element, P-Channel, Silicon, Meta | |
BSS84Q | DIODES |
获取价格 |
P-CHANNEL ENHANCEMENT MODE MOSFET | |
BSS84Q | YANGJIE |
获取价格 |
SOT-23 | |
BSS84Q-13-F | DIODES |
获取价格 |
Small Signal Field-Effect Transistor, 0.13A I(D), 50V, 1-Element, P-Channel, Silicon, Meta | |
BSS84Q-7-F | DIODES |
获取价格 |
Small Signal Field-Effect Transistor, 0.13A I(D), 50V, 1-Element, P-Channel, Silicon, Meta | |
BSS84S62Z | FAIRCHILD |
获取价格 |
Small Signal Field-Effect Transistor, 0.13A I(D), 50V, 1-Element, P-Channel, Silicon, Meta | |
BSS84S6R | CYSTEKEC |
获取价格 |
Dual P-Channel MOSFET | |
BSS84S6R-0-T1-G | CYSTEKEC |
获取价格 |
Dual P-Channel MOSFET |