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BSS84PL6327HTSA1 PDF预览

BSS84PL6327HTSA1

更新时间: 2024-01-18 01:44:49
品牌 Logo 应用领域
英飞凌 - INFINEON 局域网开关光电二极管晶体管
页数 文件大小 规格书
8页 146K
描述
Small Signal Field-Effect Transistor, 0.17A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3

BSS84PL6327HTSA1 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.56其他特性:LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (Abs) (ID):0.17 A最大漏极电流 (ID):0.17 A
最大漏源导通电阻:12 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss):3 pFJESD-30 代码:R-PDSO-G3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):0.36 W参考标准:AEC-Q101
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

BSS84PL6327HTSA1 数据手册

 浏览型号BSS84PL6327HTSA1的Datasheet PDF文件第2页浏览型号BSS84PL6327HTSA1的Datasheet PDF文件第3页浏览型号BSS84PL6327HTSA1的Datasheet PDF文件第4页浏览型号BSS84PL6327HTSA1的Datasheet PDF文件第5页浏览型号BSS84PL6327HTSA1的Datasheet PDF文件第6页浏览型号BSS84PL6327HTSA1的Datasheet PDF文件第7页 
BSS 84 P  
SIPMOS Small-Signal-Transistor  
Feature  
Product Summary  
V
-60  
8
V
DS  
P-Channel  
R
DS(on)  
Enhancement mode  
Logic Level  
I
-0.17  
A
D
PG-SOT-23  
Avalanche rated  
dv/dt rated  
3
2
Qualified according to AEC Q101  
1
Halogen-free according to IEC61249-2-21  
VPS05161  
Drain  
pin 3  
Tape and Reel  
Type  
Package  
Marking  
YBs  
Gate  
pin1  
BSS 84 P  
BSS 84 P  
PG-SOT-23  
PG-SOT-23  
H6327:3000pcs/r.  
H6433:10000pcs/r.  
Source  
pin 2  
YBs  
Maximum Ratings, at  
T
= 25 °C, unless otherwise specified  
A
Parameter  
Symbol  
Value  
Unit  
A
Continuous drain current  
I
D
T =25°C  
-0.17  
-0.14  
-0.68  
A
T =70°C  
A
Pulsed drain current  
I
D puls  
T =25°C  
A
2.6  
mJ  
Avalanche energy, single pulse  
E
E
AS  
I =-0.17 A , V =-25V, R =25  
DD GS  
D
0.036  
-6  
Avalanche energy, periodic limited by T  
Reverse diode dv/dt  
AR  
jmax  
dv/dt  
kV/µs  
I =-0.17A, V =-48V, di/dt=-200A/µs, T  
DS  
=150°C  
jmax  
S
Gate source voltage  
Power dissipation  
V
V
±20  
GS  
P
0.36  
W
tot  
T =25°C  
A
°C  
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
T
,
T
-55... +150  
55/150/56  
j
stg  
Rev 2.6  
Page 1  
2011-06-01  

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