Datasheet > BSS84W

BSS84W

更新时间： 2024-03-03 10:11:02

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
6页	580K
描述
SOT-323

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数据手册

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BSS84W 数据手册

RoHS

COMPLIANT

BSS84W

P-Channel Enhancement Mode Field Effect Transistor

Product Summary

● V_DS

-60 V

● I_D

-0.17 A

● R_DS(ON)( at V_GS=-10V)

● R_DS(ON)( at V_GS=-4.5V)

＜8 ohm

＜9.9 ohm

General Description

● Trench Power LV MOSFET technology

● Low R_DS(ON)

● Low Gate Charge

● Moisture Sensitivity Level 1

● Epoxy Meets UL 94 V-0 Flammability Rating

● Halogen Free

Applications

● Video monitor

● Power management

Absolute Maximum Ratings (T =25℃unless otherwise noted)

■

Parameter

Symbol

Maximum

-60

Unit

Drain-source Voltage

Gate-source Voltage

Drain Current

V_DS

V_GS

±20

T_A=25℃ @ Steady State

T_A=70℃ @ Steady State

-0.17

-0.14

I_D

Pulsed Drain Current ^A

Total Power Dissipation @ T_A=25℃

I_DM

-0.68

0.15

P_D

Thermal Resistance Junction-to-Ambient ^B

Junction and Storage Temperature Range

R_θJA

833

℃/W

℃

T_J,T_STG

-55～+150

Ordering Information

■

PACKING

MINIMUM

PACKAGE(pcs)

INNER BOX

QUANTITY(pcs)

OUTER CARTON

QUANTITY(pcs)

PREFERED P/N

Marking

DELIVERY MODE

CODE

BSS84W

B84.

3000

30000

120000

7“ reel

1 / 6

S-E085

Rev3.3,09-Jan-24

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

12 3 4 5 6

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