Datasheet > BSS84S6R-0-T1-G

BSS84S6R-0-T1-G

更新时间： 2024-09-25 12:24:35

品牌	Logo	应用领域
全宇昕 - CYSTEKEC		/
页数	文件大小	规格书
8页	305K
描述
Dual P-Channel MOSFET

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数据手册

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BSS84S6R-0-T1-G 数据手册

Spec. No. : C465S6R

Issued Date : 2012.12.25

Revised Date :

CYStech Electronics Corp.

Page No. : 1/ 8

Dual P-Channel MOSFET

BVDSS

-50V

-170mA

BSS84S6R

RDSON@VGS=-10V, ID=-100mA

RDSON@VGS=-5V, ID=-100mA

RDSON@VGS=-3V, ID=-30mA

5Ω (typ)

6Ω (typ)

8Ω (typ)

Features

• Low on-resistance

• High ESD capability

• High speed switching

• Low-voltage drive(-2.5V)

• Pb-free package

Equivalent Circuit

Outline

BSS84S6R

SOT-363R

Tr1

Tr2

The following characteristics apply to both Tr1 and Tr2

Absolute Maximum Ratings (Ta=25°C)

Parameter

Symbol

VDS

Limits

-50

±20

Unit

Drain-Source Voltage

Gate-Source Voltage

VGS

-170

-120

-800

Continuous Drain Current @ TA=25°C, VGS=-5V (Note 3)

Continuous Drain Current @ TA=85°C, VGS=-5V (Note 3)

Pulsed Drain Current (Notes 1, 2)

IDM

TA=25℃

300

Maximum Power Dissipation

(Note 3)

P^D

TA=85℃

160

Operating Junction and Storage Temperature

Tj, Tstg

-55~+150

°C

Note : 1. Pulse width limited by maximum junction temperature.

2. Pulse width≤ 300μs, duty cycle≤2%.

3.Surface mounted on 1 in² copper pad of FR-4 board, t≤5s.

BSS84S6R

CYStek Product Specification

12 3 4 5 6 7 8

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