Datasheet > BSS84W_1

BSS84W_1

更新时间： 2024-09-25 03:22:55

品牌	Logo	应用领域
美台 - DIODES		晶体晶体管场效应晶体管
页数	文件大小	规格书
4页	143K
描述
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BSS84W_1 数据手册

BSS84W

P-CHANNEL ENHANCEMENT MODE MOSFET

SOT- 323

This is a P-channel, enhancement-mode MOSFET, housed in the industry-

standard, SOT-323 (SC-70) package. This device is ideal for portable

applications where board space is at a premium.

FEATURES

Low On-Resistance

Low Gate Threshold Voltage

Fast Switching

Available in lead-free plating (100% matte tin finish)

Drain

APPLICATIONS

Switching Power Supplies

Hand-Held Computers, PDAs

MARKING CODE: 84W

Gate

Source

T = 25°C Unless otherwise noted

MAXIMUM RATINGS

Rating

Symbol

Value

Units

Drain-Source Voltage

Drain-Gate Voltage (Note 1)

Gate-Source Voltage

Drain Current

- 50

± 20

DSS

DGR

GSS

130

200

°C

Total Power Dissipation (Note 2)

Operating Junction Temperature Range

Storage Temperature Range

-55 to +150

°C

stg

Note 1. R < 20K ohms

THERMAL CHARACTERISTICS

Symbol

Characteristic

Value

625

Units

°C/W

Thermal Resistance, Junction to Ambient (Note 2)

thja

Note 2. FR-5 board 1.0 x 0.75 x 0.062 inch with minimum recommended pad layout

8/12/2005

Page 1

www.panjit.com

12 3 4

中文翻译

下载PDF

与BSS84W_1相关器件

型号	品牌	获取价格	描述	数据表
BSS84W_15	DIODES	获取价格	P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
BSS84W_2	DIODES	获取价格	P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
BSS84W-7	DIODES	获取价格	Small Signal Field-Effect Transistor, 0.13A I(D), 50V, 1-Element, P-Channel, Silicon, Meta
BSS84W-7-F	DIODES	获取价格	P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
BSS84WAHZG	ROHM	获取价格	BSS84WAHZG is Single Pch -60V -0.21A MOSFET a
BSS84WAHZG (新产品)	ROHM	获取价格	BSS84WAHZG采用SOT-23封装，内置有单极Pch -60V -0.21A MOS
BSS84WHE3	MCC	获取价格	Tape&Reel:3Kpcs/Reel;
BSS84WQ	DIODES	获取价格	50V P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
BSS84WQ	YANGJIE	获取价格	SOT-323
BSS84WQ-7-F	DIODES	获取价格	P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR