Datasheet > BSS84Q

BSS84Q

更新时间： 2024-04-09 19:00:49

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
7页	257K
描述
SOT-23

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中文翻译

获取价格

数据手册

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BSS84Q 数据手册

RoHS

COMPLIANT

BSS84Q

P-Channel Enhancement Mode Field Effect Transistor

Product Summary

● V_DS

-60V

● I_D

-0.25A

● R_DS(ON)( at V_GS=-10V)

● R_DS(ON)( at V_GS=-4.5V)

＜3.6 ohm

＜4.5 ohm

General Description

● Trench Power LV MOSFET technology

● Low R_DS(ON)

● Low Gate Charge

● Moisture Sensitivity Level 1

● Epoxy Meets UL 94 V-0 Flammability Rating

● Halogen Free

● Part no. with suffix “Q” means AEC-Q101 qualified

Applications

● Video monitor

● Power management

● 12V Automotive systems

Absolute Maximum Ratings (T =25℃unless otherwise noted)

■

Parameter

Symbol

Maximum

-60

Unit

Drain-source Voltage

Gate-source Voltage

V_DS

V_GS

±20

T_A=25℃ @ Steady State

T_A=100℃ @ Steady State

-0.25

-0.17

-0.8

Drain Current

I_D

Pulsed Drain Current ^A

Total Power Dissipation ^B

I_DM

0.6

T_A=25℃

P_D

0.3

T_A=100℃

Thermal Resistance Junction-to-Ambient ^B

Junction and Storage Temperature Range

R_θJA

250

℃/W

T_J,T_STG

-55～+175

℃

Ordering Information (Example)

■

PACKING

PREFERED P/N

MINIMUM

PACKAGE(pcs)

INNER BOX

QUANTITY(pcs)

OUTER CARTON

QUANTITY(pcs)

Marking

DELIVERY MODE

CODE

BSS84Q

B84.

3000

30000

120000

7“ reel

1 / 7

S-S5573

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

Rev.1.0, 27-Nov-23

12 3 4 5 6 7

中文翻译

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